Low temperature growth of nanocrystalline and ultrananocrystalline diamond films: A comparison

Kulisch, W.; Petkov, Christo; Petkov, E.E.; Popov, C.; Gibson, P.N.; Vereš, M.; Merz, Rolf; Merz, Birgit; Reithmaier, Johann Peter

doi:10.1002/pssa.201228270

Cited by 29 publications

(14 citation statements)

References 56 publications

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“…The overgrowth of the monocrystalline diamond pillars was performed referring to ref. in a self‐designed HFCVD setup described elsewhere . Prior to the overgrowth, the seven tungsten filaments (0.3 mm in diameter) were carburized.…”

Section: Methodsmentioning

confidence: 99%

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Jaffe

Felgen

Gal

et al. 2018

Advanced Optical Materials

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In contrast to the more common nitrogen-vacancy (NV) center in diamond, the SiV possesses bright narrow band and spectrally stable optical transition concentrated (70% of the fluorescence) in its zero phonon line (ZPL) protected by inversion symmetry, even at room temperature. [4,5] Despite these attractive characteristics, some properties hinder the SiV applicability: short coherence times (nanosecond scale), limited mainly by coupling to the thermal acoustic phonon bath [6] and low extraction efficiency from the high-index diamond substrate. Different methods for mitigating these issues have been investigated in recent years, [1,[7][8][9][10] but currently there is no apparent approach to exploit the SiV superb optical properties at room temperature and at the same time to increase its photon outcoupling without compromising its optical quality and coherence. The use of nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection within the diamond, but at the same time may introduce additional decoherence [11] and optical instability mechanisms attributed to poor surface quality (surface defects containing spins, charge traps, nondiamond phases, surface termination of atoms and groups [12] ) as a result of the synthesis or structuring process. The SiVs can be formed in the diamond host via ion implantation of silicon ions [1,13] or by introducing silicon atoms from a solid or gas precursor during the growth stage of diamond layers. [14,15] The latter is considered to better preserve the quality of the diamond layer by avoiding implantation damages and promoting a smaller amount of vacancy clusters and nonradiative sites which can otherwise hinder the SiV applicability. Herein, the ability to sculpt nanostructures by a bottom-up approach enables the creation of higher quality complex structures that are not accessible via top-down fabrication techniques. [16][17][18] In particular, this concerns the fabrication of highly confined and deterministic nanostructures hosting an atom-like system that maintain the original substrate quality -a critical prerequisite for quantum information and sensing applications. Here, we present a robust and deterministic template-assisted bottom-up process for the creation of high-quality nanoscale diamond pyramids incorporating SiVs.The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template-assisted bottom-up process for the creation of high-quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefi...

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Section: Methodsmentioning

confidence: 99%

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Jaffe

Felgen

Gal

et al. 2018

Advanced Optical Materials

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“…NCD films have been deposited by hot‐filament chemical vapor deposition from a 1% CH 4 /H 2 mixture. A self‐designed set‐up with seven tungsten filaments was used, which is capable to cover 3 inch wafers homogeneously and which has been described in detail in a previous publication . The major deposition parameters are summarized in Table .…”

Section: Methodsmentioning

confidence: 99%

Investigation of NV centers in nano‐ and ultrananocrystalline diamond pillars

Petkov

Rendler

Petkov

et al. 2013

Physica Status Solidi (a)

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Diamond nanopillars with diameters of 1 mm down to 50 nm have been fabricated from two types of diamond thin films, namely nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD) using electron beam lithography (EBL) and reactive ion etching (RIE) in an inductively coupled oxygen plasma (ICP). Aim of the study was to investigate the suitability of these pillars to incorporate nitrogen-vacancy (NV) color centers for applications in quantum information technology (QIT). The first part of the investigation is devoted to a characterization of the pillars, their shape, size, and properties.The second part of this investigation concerns the optical properties of NCD and UNCD nanopillars and the incorporation of NV centers within them. Among others, fluorescence mapping and photoluminescence measurements have been employed for this purpose. It turned out that NCD pillars are quite promising for the applications in QIT envisioned. At the present time, the opposite is the case for UNCD pillars. The reasons for these differences will be discussed on the basis of the differences of the two materials NCD and UNCD.

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“…Detailed information about the setup can be found in Ref. . The other main growth parameters were as following: substrate temperature ca.…”

Section: Methodsmentioning

confidence: 99%

“…600 nm (after 3 h deposition) were closed and showed well‐facetted topography with crystallite sizes in the range of a few hundreds of nm at most. They were thoroughly characterized in an earlier work by scanning electron microscopy (SEM), X‐ray diffraction, X‐ray photo‐electron spectroscopy, and Raman spectroscopy . The initial thickness of the films investigated in the current study was ca.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Schmidt

Bernardoff

Singer

et al. 2019

Physica Status Solidi (a)

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A fabrication process of dense arrays of one-dimensional diamond nanostructures (diamond nanopillars) integrated on nanocrystalline diamond (NCD) membranes is implemented with an etched-through marker hole in the membrane in the center of the array. NCD films deposited on silicon substrates are used as starting material. The main fabrication steps consist of structuring the NCD film by electron beam lithography (EBL) applying aluminum as a hard mask and subsequent inductively coupled O 2 plasma reactive ion etching (ICP RIE), followed by structuring of the silicon substrate from the backside to open a NCD membrane. The developed fabrication procedure for nanostructured membranes can be transferred to monocrystalline diamond and implemented for deterministic single ion implantation into the nanopillars for generation of nitrogen-vacancy (NV) or silicon-vacancy (SiV) centers. For this purpose, the etched marker hole can be applied for alignment in the implantation process. Such diamond nanostructures with integrated color centers could play an important role in the development of novel quantum memory devices.

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Low temperature growth of nanocrystalline and ultrananocrystalline diamond films: A comparison

Cited by 29 publications

References 56 publications

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Investigation of NV centers in nano‐ and ultrananocrystalline diamond pillars

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

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