Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies

Amrani, Rachid; Benlekehal, D.; Baghdad, R.; Senouci, D.; Zeinert, A.; Zellama, K.; Chahed, L.; Sib, J.D.; Bouizem, Y.

doi:10.1016/j.jnoncrysol.2007.10.044

Cited by 31 publications

(23 citation statements)

References 29 publications

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“…The absorption bands at 500-700 cm -1 , 840-900 cm -1 , 1000-1100 cm -1 and 1900-2200 cm -1 are attributed to Si-H wagging/rocking mode, Si-H 2 /(Si-H 2 ) n stretching/bending mode, Si-O stretching mode and Si-H/(Si-H 2 ) n stretching mode, respectively [14,17,24]. In this case, the peak related to the wagging/rocking mode locates at *630 cm -1 , indicating the presence of a crystalline phase in these samples [12,13,24]. The peak related to stretching absorption band locates at *2090 cm -1 , and no absorption peak can be found at *2010 cm -1 , which suggests that the hydrogen is predominately bonded to Si as Si-H 2 and (Si-H 2 ) n complexes [17,24].…”

Section: Methodsmentioning

confidence: 84%

“…Previous studies showed that lc-Si:H thin films can be obtained by frequency (RF) magnetron sputtering with a silicon target when the sputtering discharge is operated with the H 2 /Ar gas mixture [7][8][9]11]. And it was found that the growth and properties of lc-Si:H thin films would be influenced by deposition conditions such as substrate temperature, RF power, total pressure and partial hydrogen and argon dilution [7][8][9][11][12][13][14]. The substrate temperature is a crucial deposition condition for optimization of growth and properties of lc-Si:H thin films [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Wang

Huang

et al. 2015

Rare Met.

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Hydrogenated microcrystalline silicon (lcSi:H) thin films were deposited by an radio frequency (RF) (13.56 MHz) magnetron sputtering at different substrate temperatures (100-300°C), and the influences of substrate temperature on the growth and properties of lc-Si:H thin films were investigated. Surface roughness and crystallinity of the thin films increase as substrate temperature increases. And all thin films are at the transition region (X c = 49.2 %*61.0 %). The lc-Si:H thin films deposited at lower substrate temperature (B200°C) represent a weak (220) preferred orientation, while the thin films deposited at higher substrate temperature (C250°C) exhibit a weak (111) preferred orientation. The lc-Si:H thin films have a dense structure, and the structural compactness of the thin films slightly increases with substrate temperature increasing. The Fourier transform infrared spectroscopy (FT-IR) results indicate that the lc-Si:H thin films have a low hydrogen content (3.9 at%-5.6 at%), which is in favor of reducing light-induced degradation effect.

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Section: Methodsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Wang

Huang

et al. 2015

Rare Met.

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“…This last is taken from experimental data of samples of µc-Si:H that have approximately the same crystalline volume fraction [20].…”

Section: The Model Of Simulationmentioning

confidence: 99%

Optoelectronic properties simulation of hydrogenated microcrystalline silicon Schottky diode

Chahi

Bouhekka

Sib

et al. 2010

Phys. Status Solidi (c)

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Microcrystalline silicon has its own macroscopic characteristics which are different from each of the single phase characteristics. Hence, each phase of µc‐Si:H plays an important role in electronic transport. In this paper, we model a basic Schottky structure with a 1 µm thick, the device considered in our study is an alternance of amorphous and crystalline regions with different fractions (0 to 80%). The latest has a columns shape whose average size between 50 Å and 200 Å. The heterojunction physics is applied to the region of interfaces between the crystalline and the amorphous components. The numerical solution of the continuity and Poisson’s equations by Newton‐Raphson method let us to simulate the spectral response and the I(V) characteristic of µc‐Si:H Schottky diode under monochromatic illumination for the wavelength varying between 0.4µm and 1.2µm and under diverse bias voltage. We observe that the maximum of sensibility of microcrystalline diodes shifts towards higher energies compared with them of amorphous diodes, with normalised efficiency varying from 0.7 to 0.8 and the maximum position varies slightly with crystalline fraction and independently to the applied voltage (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Hydrogenated nanocrystalline silicon (nc-Si:H) thin films have attracted much attention in the past few years due to their outstanding properties such as higher electrical conductivity at room temperature, increased stability against light induced degradation, enhanced low-energy absorption in contrast to amorphous hydrogenated silicon (a-Si:H) [1][2][3][4], and large area deposition with high doping efficiency, good uniformity and better reproducibility even at low temperatures (100-300°C) on non-crystalline substrates by plasma enhanced chemical vapor deposition (PECVD) technique [5][6][7]. Therefore, nc-Si:H thin films are identified as an ideal material for application in electrical and photovoltaic devices such as tunnel diodes [8], emitting diodes [9], thin film transistors (TFTs) [10][11][12] and solar cells [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

Pan

Ding

Cheng

2015

J Mater Sci: Mater Electron

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Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition technique. Annealing treatment was performed on the deposited films at 400°C for 60 min in nitrogen atmosphere. Microstructure of the as-deposited and annealed films was characterized by X-ray diffraction (XRD) and Raman scatter spectra, surface morphology of these films was analyzed with atomic force microscopy (AFM), and piezoresistive properties of these films were evaluated by a four-point bending-based measurement system. The influence of annealing treatment on microstructure and piezoresistive properties of borondoped nc-Si:H thin films was comparatively studied. The Raman scatter spectra and XRD results together with AFM analysis results revealed that annealing treatment can increase the average grain size and crystalline volume fraction of boron-doped nc-Si:H thin films, and can alter grains distribution and concentration of the films. The piezoresistive property evaluation results showed that annealing treatment can increase the gauge factor of boron-doped ncSi:H thin films from 29.9 to 42.3. These results indicated that annealing treatment can act as an effective way to improve piezoresistive sensitivity of boron-doped nc-Si:H thin films. In this paper, the correlation between borondoped nc-Si:H thin films' piezoresistive properties and microstructure changes induced by annealing was discussed in detail.

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Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies

Cited by 31 publications

References 29 publications

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Optoelectronic properties simulation of hydrogenated microcrystalline silicon Schottky diode

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

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