Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

Surface Modification of Nanoporous Anodic Alumina during Self-Catalytic Atomic Layer Deposition of Silicon Dioxide from (3-Aminopropyl)Triethoxysilane

“…On the other hand, silicon dioxide is a material of particular interest for membrane modification due to its dielectric nature, high chemical and thermal stability. In this context, silica-alumina composite membranes synthesized through chemical vapor deposition (CVD) of tetraethylorthosilicate (TEOS) and aluminium tri-sec-butoxide precursor have been proposed for application in membrane reactors due to their high gas permeation and selectivity [ 15 ] The ALD deposition of conformal SiO 2 films from a wide variety of silane precursors, including tetraethoxysilane, tris[dimethylamino]silane, bis[diethylamino]silane, ( N,N -dimethylamino)trimethylsilane, vinyltrimethoxysilane, trivinylmethoxysilane, tetrakis(dimethylamino)silane, tris(dimethylamino)silane, tetrakis(ethylamino)silane, aminodisilane and 3-aminopropyltriethoxysilane (APTES) has been explored in the literature, [ 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This work focuses on the thermal ALD deposition process based on the self-catalytic reaction between 3-aminopropyltriethoxysilane, water, and ozone as precursors.…”

Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

“…Conformality is calculated based on a statistica analysis of a number of film thickness measurements of a fracture surface over the feature of interest, as shown in Figure 1b. Conformality (C1) can be written as shown in Equatio (1). [26]…”

“…SiO 2 thin films have many advantages, such as high light transmittance, good insulation, good dielectric properties, and strong corrosion resistance. At present, SiO 2 thin films have been widely used in optical film devices, electronic devices, integrated devices, sensors, and other fields [1][2][3][4][5][6]. However, several new applications for SiO 2 thin films will require conformal coverage (good conformality) of micro-and nano-scale features in the substrate.…”

SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

“…39 One approach to decrease the deposition temperature and the level of contamination is to use plasma-enhanced-ALD (PE-ALD). 40,58,59 It is possible to decrease the temperature below 50 C, and these SiO 2 lms are described as excellent candidates for thin lm encapsulation in organic devices or TFT gate insulators due to the absence of impurities and good electrical properties. [41][42][43]60 Currently, the use of amino ligands as precursors leads to promising results, even on large surfaces; however, a nal annealing step at 900-1000 C is required to decrease interface defects or carbon contamination.…”