Low temperature II–VI nanowire growth using Au–Sn catalysts

Kahen, K. B.; Goldthorpe, Irene A.; Minter, John

doi:10.1016/j.jcrysgro.2011.03.013

Cited by 5 publications

(8 citation statements)

References 35 publications

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“…Nanowires are the building blocks for integrated nanoscale electronics and optoelectronics and can be synthesized from various semiconductors. Considerable efforts have been made in the synthesis of one-dimensional ZnTe nanostructures such as nanorods and nanowires [11][12][13][14][15][16][17][18][19]. In fact, ZnTe nanowires having both the cubic ZB structure [13,14] and the hexagonal WZ structure [11,12] have been synthesized.…”

Section: Introductionmentioning

confidence: 99%

“…Considerable efforts have been made in the synthesis of one-dimensional ZnTe nanostructures such as nanorods and nanowires [11][12][13][14][15][16][17][18][19]. In fact, ZnTe nanowires having both the cubic ZB structure [13,14] and the hexagonal WZ structure [11,12] have been synthesized. Mn-doped semiconductor nanowires such as Mn-doped GaAs [20][21][22][23], GaN [24][25][26][27] and InP [28,29] have been synthesized and their structural and magnetic properties are now understood theoretically.…”

Section: Introductionmentioning

confidence: 99%

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Electronic and magnetic properties of pristine and transition metal doped ZnTe nanowires

Mukherjee¹,

Gupta²,

Jena³

2013

J. Phys.: Condens. Matter

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We have carried out density functional theory based calculations for understanding the structural, electronic and magnetic properties of pristine and transition metal (TM) doped ZnTe nanowires. Pristine ZnTe nanowires (NWs) turn out to be semiconducting in nature, with the band gap varying with the diameter of the NWs. In Mn-doped ZnTe NWs, the Mn atoms retain a magnetic moment of 5 μB each and couple anti-ferromagnetically. A half metallic ferromagnetic state, although energetically not favorable, is observed arising from a strong hybridization between the d-states of Mn atoms and p-states of Te atoms. Further studies of V- and Sc-doped ZnTe NWs reveal the systems to be anti-ferromagnetic.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic and magnetic properties of pristine and transition metal doped ZnTe nanowires

Mukherjee¹,

Gupta²,

Jena³

2013

J. Phys.: Condens. Matter

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“…There are many reports of the synthesis of group IV and III-V core-shell nanowires [2,[12][13][14][15]. Other than a brief summary of our work elsewhere [11], to our knowledge there is only one other report of VLS-grown II-VI core-shell nanowires [16]. However, in the latter paper the material quality and thus optical emission properties of the nanowires was poor.…”

Section: Introductionmentioning

confidence: 87%

“…Several groups have synthesized ZnSe nanowires, however, photoluminescence (PL) measurements indicate weak band-edge and high sub-bandgap defect emission [7][8][9][10]. We previously reported the use of a novel metal alloy catalyst, AuSn, to permit the growth of ZnSe nanowires at reduced temperatures where low-defect material can be obtained [11]. However, we found that even these low-defect ZnSe nanowires emitted a broad sub-bandgap emission peak.…”

Section: Introductionmentioning

confidence: 89%

“…Gold-catalyzed ZnSe nanowires are generally grown at 550 • C and above because of the high melting temperatures of Au-Zn-Se alloys. To be able to grow the ZnSe nanowire cores at low temperatures, Au 0.35 Sn 0.65 , which has a lower melting temperature than pure Au, was used as the catalyst [11]. To form the catalysts, a 4.5 nm thick Sn film, followed by a 1.5 nm thick Au film, was thermally evaporated onto the surface of a thermally oxidized Si(001) surface.…”

Section: Core-shell Nanowire Synthesismentioning

confidence: 99%

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II–VI nanowire radial heterostructures

2013

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There are many reports of ZnSe nanowire synthesis, but photoluminescence measurements on these nanowires indicate weak band-edge and high sub-bandgap defect emission. The two main contributors to the non-optimal photoluminescence are nanowire growth at high temperatures and unpassivated surface states. In this paper, the synthesis of II-VI core-shell nanowires by metal organic vapor phase epitaxy is reported. We demonstrate that larger bandgap shells that passivate the nanowire surface states can be deposited around the nanowires by increasing the partial pressures of the shell reactants without a large increase in growth temperature, allowing high quality material to be obtained. The deposition of nearly lattice-matched ZnMgSSe shells on the ZnSe nanowires increases the band-edge luminescent intensity of the ZnSe nanowires by more than four orders of magnitude and improves the band-edge to defect photoluminescence intensity ratio to 12,000:1. The corresponding full widths at half maximum of the band-edge exciton peaks of the core-shell nanowires can be as narrow as 2.8 nm. It is also shown that magnesium and chlorine can be incorporated into the ZnSe nanowire cores, which shortens the emission wavelength and is known to act as an n-type dopant, respectively.

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Nanowire Electronics: From Nanoscale to Macroscale

et al. 2019

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Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

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Low temperature II–VI nanowire growth using Au–Sn catalysts

Cited by 5 publications

References 35 publications

Electronic and magnetic properties of pristine and transition metal doped ZnTe nanowires

Electronic and magnetic properties of pristine and transition metal doped ZnTe nanowires

II–VI nanowire radial heterostructures

Nanowire Electronics: From Nanoscale to Macroscale

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