2019
DOI: 10.1016/j.orgel.2019.06.053
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Low-temperature in-situ preparation of ZnO electron extraction layer for efficient inverted polymer solar cells

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Cited by 18 publications
(11 citation statements)
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“…On the other hand, the properties of the OSC device composed of the ZnO 100 10nm film were similar to those of the ZnO 250 -based one. Although a lowtemperature preparation of ZnO films from the Zn(AcAc) 2 precursor for OSCs has been reported, 35 the preparation temperature of ZnO 100 80nm (100 °C) is lower than that of the reported method (150 °C). This result suggests that an effective low-temperature sol−gel method for the preparation of the ZnO film as the electron transport layer was realized, and that similar solar cell properties can be obtained for ZnO films with similar resistance even though the densities of the ZnO films are different.…”
mentioning
confidence: 79%
“…On the other hand, the properties of the OSC device composed of the ZnO 100 10nm film were similar to those of the ZnO 250 -based one. Although a lowtemperature preparation of ZnO films from the Zn(AcAc) 2 precursor for OSCs has been reported, 35 the preparation temperature of ZnO 100 80nm (100 °C) is lower than that of the reported method (150 °C). This result suggests that an effective low-temperature sol−gel method for the preparation of the ZnO film as the electron transport layer was realized, and that similar solar cell properties can be obtained for ZnO films with similar resistance even though the densities of the ZnO films are different.…”
mentioning
confidence: 79%
“…J ph is dened as J ph ¼ J L -J D , where J L and J D are current densities measured under the illumination of AM 1.5G, 100 mW cm À2 , and in the dark, respectively. 42 The effective voltage V eff is dened as V eff ¼ V 0 À V appl , in which V 0 is the compensation voltage when J L ¼ J D , and V appl is the applied voltage from À8 to +3 V. 43,44 At a V eff of 3 V, the J sat s for PM6:BTP-BO-4Cl, PM6:BTP-BO-4Cl:DTTC-4ClC9, and PM6:DTTC-4ClC9 blend lms is 27.40, 27.32, and 21.73 mA cm À2 , respectively, yielding P diss s of 96.9, 99.3 and 96.9%. The higher P diss for ternary devices indicates more efficient exciton dissociation and charge extraction with the addition of DTTC-4ClC9, facilitating the improvement of the FF and J SC .…”
Section: Table 1 Summary Of Photovoltaic Parameters Of the Binary And...mentioning
confidence: 99%
“…To date, ZnO and PEDOT:PSS are the two most widely used CTLs in ST‐OSCs. [ 163–165 ] They both exhibits excellent charge carrier transport properties, unfortunately, their optical properties are not optimal for ST‐OSCs. [ 166,167 ] For example, typically 30–40 nm‐thick ZnO layers are needed when applied as the electron transport layer, which limits the transmittance of the film.…”
Section: Strategies and Progressmentioning
confidence: 99%