Low-temperature ion beam mixing of medium-Z metals

Børgesen, Peter; Lilienfeld, D. A.; M’Saad, Hichem

doi:10.1016/0168-583x(91)95280-q

Cited by 38 publications

(8 citation statements)

References 23 publications

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“…The global thermal spike model of Johnson et al [30], on the other hand, which predicts a mixing rate of 927 # e 4 , gave an efficiency of 13.6 # e 5 /eV. The corresponding values obtained from the Borgesen model [31,32], which assumes local spherical spike formation at the end of individual recoil cascades are, respectively, 3.04 Â 10 3 # e 4 and 44.8 # e 5 /eV, a factor of three larger than predicted by the Johnson model. However, one must be cautious when comparing this value with the experiment since in the proposed model (DH mix / DH coh ) must lie between 0 and 0.09 [28,32].…”

Section: Resultsmentioning

confidence: 99%

Ion Beam Mixing of Ag/Si Bilayer

Masoud¹,

Arafah²

1999

phys. stat. sol. (a)

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The Rutherford backscattering (RBS) technique has been used to study the ion-induced mixing of Ag thin film deposited onto Si substrates. The mixing was initiated by a 400 keV 40 Ar + beam by varying the dose up to 3 Â 10 17 ions/cm 2 at constant flux of 0.6 mA/cm 2 . To assist the evaluation of the results, all spectra were simulated. The RBS spectra indicate that mixing is initiated after a dose of 5 Â 10 15 ions/cm 2 is reached. With progressively increasing Ar dose to reach 1.6 Â 10 17 ions/cm 2 , the signal was noted to exhibit reduction of intensity accompanied by an increase of width and followed by long tail distributions, indicating a larger intermixed region. At higher doses the RBS spectra indicate that the Ag top layer was completely destroyed. The mixing rate parameters (or efficiencies) of Ag and Si were determined. Further insight into the mixing mechanism was gained by determining the diffusivities of both Ag and Si. Comparison between theory and experiment reveals that Ag diffuses within Si according to the collective effects resulting from thermal spike and thermally activated radiation enhanced diffusion (RED) mechanisms.

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Section: Resultsmentioning

confidence: 99%

Ion Beam Mixing of Ag/Si Bilayer

Masoud¹,

Arafah²

1999

phys. stat. sol. (a)

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“…There must be some other mechanism playing an active role during mixing in this system. Recently, Borgesen et al (1991) proposed a model for medium Z (17 ~< Z ~< 37) element where solid solution forms due to mixing. In those cases the mixing rate can be explained by considering the formation of well separated local spikes instead of a single global spike.…”

Section: Discussionmentioning

confidence: 99%

Ar ion induced copper germanide phase formation at room temperature

et al. 1997

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The copper germanide phase Cu3Ge which is emerging as an alternative material for making contacts and interconnects for semiconductor industry has been producect across the interface ofCu/Ge hilayers by ion beam mixing at room temperature using 1 MeV Ar ions. The dose dependence of the thickness of the mixed region shows a diffusion controlled mixing process. The experimental mixing rate and efficiency for this phase are 5'35 nm ~ and 10-85nm~/keV respectively. At doses above 8 x l0 ts Ar/cm 2 the formation and growth of another copper rich phase CusGe has been observed. The present theoretical models are inadequate to explain the observed experimental mixing rate.

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“…Model lokalnih "termičkih šiljaka" su razvili Børgesen i njegovi saradnici da bi objasnili linearnu zavisnost brzine atomskog miješanja od gustine deponovane energije, koja se javlja kod metalnih sistema srednjih vrijednosti atomskog broja [77,78] …”

Section: Model Lokalnih "Termičkih šIljaka"unclassified

“…Odgovarajuće debljine "implantirane zone" Konačno, korištenjem Drude-ovog modela, dovedena je u vezu kompleksna dielektrična funkcija, ε(ω) = ε 1 (ω) + i . ε 2 (ω), sa kompleksnom električnom provodljivošću sistema, Za opisivanje "netermalnog" rasta regiona miješanja, unutar kojeg nastaje čvrsti rastvor ili amorfna odnosno kristalna faza, razvijeno je više teorijskih modela [72,[77][78][79][80]83].…”

Section: Električna I Optička Otpornostunclassified

“…Ukoliko ova oblast predstavlja čvrsti rastvor može se primijeniti balistički model [72,73], koji uzima u obzir samo dvočestične sudare, ili modeli "termičkih šiljaka", koji uključuju hemijski aktiviranu difuziju atoma uslijed nastanka lokalnih [77,78] odnosno globalnih [79,80] "šiljaka". Sa druge strane, za oblasti miješanja unutar kojih dolazi do nastanka jedinjenja, primjenjuju se modeli koji opisuju proces miješanja kao rezultat difuzije atoma tokom formiranja jedinjenja pri balističkim uslovima [83] ili u prisustvu lokalnih [107] Fe/a-Si sistema je nađeno da amorfizovana struktura podloge obezbjeđuje skoro duplo veću brzinu miješanja u odnosu na Fe/c-Si sistem [109,110].…”

Section: Električna I Optička Otpornostunclassified

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Nanostructural characterization of CrN and CO thin films on silicon substrate, modified by ion bombardment

Novaković¹

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Low-temperature ion beam mixing of medium-Z metals

Cited by 38 publications

References 23 publications

Ion Beam Mixing of Ag/Si Bilayer

Ion Beam Mixing of Ag/Si Bilayer

Ar ion induced copper germanide phase formation at room temperature

Nanostructural characterization of CrN and CO thin films on silicon substrate, modified by ion bombardment

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