Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications

Milanova, M.; Kirilov, K.; Georgiev, Stefan; Kostov, Konstantin; Piana, Giacomo; Avdeev, G.

doi:10.1016/j.jcrysgro.2021.126335

Cited by 2 publications

(1 citation statement)

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“…To evaluate the influence of N and Sb on the PV quality of the solar cell structure we have grown and studied nitrogen-free GaAsSb layers with the same absorption edge as GaAsSbN. The growth technology and material properties are given in our previous paper [51]. Figure 8 presents the SPV amplitude spectra of GaAsSbN and GaAsSb p-i-n solar cell structures grown on GaAs substrates at nearly the same temperature regime.…”

Section: Resultsmentioning

confidence: 99%

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

Donchev,

Milanova

2023

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In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV) method for fast and reliable control of GaAs-based solar cells directly on epitaxial heterostructures before metallization and photolithography processes. The magnitude of the SPV corresponds to the generated photovoltage in the photoactive region, which is related to the open circuit voltage of the cell. The focus of this investigation is the potential of dilute nitride compounds grown by low-temperature liquid-phase epitaxy (LPE) for application as intermediate cells in multijunction solar cells. First, SPV spectroscopy is used to determine the photosensitivity spectral range and bandgap of the grown dilute nitride compound layers. Further, the photovoltaic quality of the grown solar cell heterostructures is evaluated by comparing the magnitude of their SPV signals with that of a reference GaAs solar cell. A drastic reduction in the measured SPV is observed for nitrogen-containing solar cell structures, which correlates with the lowering of solar cell open-circuit voltage values measured under standard test conditions. Finally, solar cell structures based on nitrogen-free GaAsSb compounds with the same long-wavelength photosensitivity limit as GaAsSbN are grown by LPE. They show one order of magnitude higher SPV signal and, therefore, have a great potential for solar cell application.

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Section: Resultsmentioning

confidence: 99%

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

Donchev,

Milanova

2023

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Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications

Milanova

Georgiev

2022

Energies

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The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells. To avoid non-uniformity effects in the composition of these compounds with two or three different group-V volatile elements, the crystallization was carried out from finite melt with a thickness of 0.5 mm at low (<560 °C) temperatures. X-ray microanalysis and X-ray diffraction were used to determine the composition, lattice mismatch, and crystalline quality of the epitaxial layers. The morphology and surface roughness were examined by atomic force microscopy. Surface photovoltage (SPV) spectroscopy at room temperature was applied to study the optical absorption properties and the photocarrier transport in the samples. The long-wavelength photosensitivity of the GaAsSbN and GaAsSb layers, determined from their SPV spectra, is extended down to 1.2 eV. Although GaAsSb has a slightly larger lattice mismatch with the GaAs substrate compared to GaAsSbN, it presents a higher photoresponse, since, in GaAsSbN, the incorporation of N induces additional recombination centres. Therefore, GaAsSb could be an alternative to GaAsSbN for solar cell applications.

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Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications

Cited by 2 publications

References 37 publications

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications

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