2005
DOI: 10.1016/j.ssc.2004.12.001
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Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

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Cited by 14 publications
(12 citation statements)
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“…Another specific feature of these curves is that they exhibit two peaks of negative values of the MC derivative. In [1,2], these peaks were attributed to MC associated with light and heavy holes. It can be seen, however, in Fig.…”
Section: Resultsmentioning
confidence: 99%
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“…Another specific feature of these curves is that they exhibit two peaks of negative values of the MC derivative. In [1,2], these peaks were attributed to MC associated with light and heavy holes. It can be seen, however, in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…We begin with an analysis of the existence of two minima in the field dependence of the MC derivative. Originally, it seemed that this effect is governed by the interference contribution to MC in weak fields, as it occurs in n-Ge [1,2]. However, these two minima are preserved up to rather high temperatures, at which no interference contribution can exist.…”
Section: Resultsmentioning
confidence: 99%
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“…We have shown previously [1][2][3] that the averaging of the hole effective mass in lightly doped p-Ge occurs during a time comparable with the energy scattering time, rather than with the momentum scattering time, as it has been believed so far [4]. Our conclusion was based on measurements of the dependence of the microwave energy absorption (frequency 10 10 Hz) on the magnetic field at low temperatures [magnetoabsorption (MA)].…”
Section: Introductionmentioning
confidence: 85%