Low temperature magnetoresistance of InSb whiskers

Druzhinin, A. A.; Bolshakova, І.; Ostrovskii, Igor; Khoverko, Yuriy; Liakh-Kaguy, Natalia

doi:10.1016/j.mssp.2015.07.030

Cited by 28 publications

(9 citation statements)

References 17 publications

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“…To determine the presence of quantum interference effects in the whiskers it is necessary to investigate the behavior of resistance in the low magnetic fields (up to 1-2 T) and low temperatures (1.7-4.2 K). Our previous investigation of InSh whiskers have shown an appearance of SdH oscillations at low magnetic fields, which indicates in the presence of quantum interference in the whiskers [10,11]. However, quantum interference effect (small corrections to the conductivity) could not call so much value of negative magnetoresistance (of about 50%) as observed in experiment.…”

Section: Resultsmentioning

confidence: 78%

“…For example, NMR effect was found in Ge whiskers [14]. In InSb whiskers strong spin-orbital interaction of charge carriers should occur, which is confirmed by magnetoresistance splitting and the obtained giant g-factor 45-60 [11]. However, this effect should disappear quickly with the increase of the temperature above 50 K, where transition from hopping conductance to classical mechanism of conductance should take place.…”

Section: Resultsmentioning

confidence: 79%

“…The objects of studies were to observe the behavior of InSb whiskers with n-type conductivity obtained by the chemical transport reactions method [11]. Investigated whiskers were doped by tin during microcrystals growth.…”

Section: Methodsmentioning

confidence: 99%

“…Our previous magnetoresistance studies of InSb whiskers doped with Sn [10,11] revealed negative magnetoresistance at low temperatures in weak magnetic fields, but its behavior wasn't analyzed at different temperatures and doping levels. It is interesting to consider transport mechanisms in InSb whiskers to explain the magnetoresistance behavior.…”

Section: Introductionmentioning

confidence: 92%

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Negative magnetoresistance in indium antimonide whiskers doped with tin

Druzhinin

Ostrovskii

Khoverko

et al. 2016

Low Temperature Physics

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was studied in longitudinal magnetic field 0-14 T in the temperature range 4.2-77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal-insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 79%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

See 2 more Smart Citations

Negative magnetoresistance in indium antimonide whiskers doped with tin

Druzhinin

Ostrovskii

Khoverko

et al. 2016

Low Temperature Physics

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“…Let us discuss the next phenomenon observed in InSb whiskers at low temperatures. The whisker magnetoresistance was shown to oscillate according to arising Shubnikov-de-Haase oscillations in magnetic fields 05017-4 [17][18][19]. One can suppose that thermo-emf oscillations could arise when the whiskers were loaded in magnetic field.…”

Section: An Analysis Of the Thermoelectric Parameters Of The Insb Whimentioning

confidence: 99%

Thermoelectric Properties of InSb Whiskers

Druzhinin¹,

Ostrovskii²,

Khoverko³

et al. 2020

J. Nano- Electron. Phys.

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The article deals with studies of thermoelectric parameters of InSb whiskers with tin concentration of about 4.4•10 18 cm-3 in the temperature range 4.2-300 K. The resistance and Seebeck coefficient were measured experimentally. The InSb whiskers have shown rather high values of Seebeck coefficient exceeding the values of bulk materials by 2-3 times. Using a special method of heat transfer in the whisker joints, the thermal conductivity of the whisker was simulated. The obtained threshold on the temperature dependence of thermal conductivity for InSb whiskers and nanowires in the range of about 100 K connecting with phonon capture of charge carriers indicates high reliability of the data obtained. As a result, ZT parameter of InSb whiskers versus temperature in the temperature range 4.2-300 K was calculated. The obtained value of ZT parameter 0.15 at room temperature indicates a possibility of the whisker use for thermal converters design.

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