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Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications
Abstract: Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative -As-ion implanted GaAs crystals.
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2008
2008
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“…LTG GaAs is characterized by high carrier mobility, fast carrier trappingand high breakdown voltage [2].…”
Section: Photoconductor Antennamentioning
confidence: 99%
“…LTG GaAs is characterized by high carrier mobility, fast carrier trappingand high breakdown voltage [2].…”
Section: Photoconductor Antennamentioning
confidence: 99%
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