Low-temperature method for thermochromic high ordered VO2 phase formation

Melnik, V.; Khatsevych, I.; Kladko, V. P.; Kuchuk, Andrian; Nikirin, V.; Romanyuk, B. N.

doi:10.1016/j.matlet.2011.10.075

Cited by 69 publications

(31 citation statements)

References 17 publications

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“…• vacuum deposition techniques including plasma-enhanced chemical vapour deposition (PECVD) [20], • pulsed laser deposition [21], • thermal evaporation technique [22], • atomic layer deposition [23], • reactive magnetron sputtering [24][25][26], • rf sputtering deposition [27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Structural And Optical Properties Of VOx Thin Films

Schneider

2015

Archives of Metallurgy and Materials

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VO x thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.Structural properties of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD. Optical transmittance and reflectance spectra were recordedwith a Lambda 19 Perkin-Elmer double spectrophotometer. Thickness of the films was determined from the profilometry. It has been confirmed by XRD that the deposited films are composed mainly of V 2 O 5 phase. The estimated optical band gap of 2.5 eV corresponds to V 2 O 5 .Keywords: VO x thin films, reactive sputtering, microstructure, optical properties, energy band gap Cienkie warstwy VO x były nanoszone na szkło Corning metodą rozpylania magnetronowego rf. Jako katody użyto metalicznego wanadu. Były one nanoszone w komorze wypełnionej mieszaniną argonu i tlenu w różnych proporcjach przy ustalonych przepływach. Zbadano wpływ ciśnienia parcjalnego tlenu w komorze na własności strukturalne i optyczne otrzymanych warstw.Własności strukturalne cienkich warstw zostały określone metodą rozpraszania promieniowania rentgenowskiego padają-cego pod małymi kątami (GIXD). Widma optyczne transmitancji i odbicia zostały wykonane przy użyciu spektrometru Lambda 19 Perkin-Elmer. Grubość badanych warstw zmierzono za pomocą profilometru.Pomiary XRD potwierdziły, że otrzymane warstwy składają się głównie z fazy V 2 O 5 . Wyznaczona optycznie przerwa energetyczna wynosząca 2.5 eV odpowiada przerwie energetycznej V 2 O 5 .

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Section: Introductionmentioning

confidence: 99%

Structural And Optical Properties Of VOx Thin Films

Schneider

2015

Archives of Metallurgy and Materials

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“…These data are in good agreement with the Xray data and confirm the thesis that the supersaturating by oxygen slows down the crystallization of films. Thus, we have demonstrated that the low-temperature method to form vanadium oxide crystalline films [11,12] can be used for ion-implanted films. As it was shown in [13], only amorphous films with rare nanocrystalline inclusions are the most suitable object for controlled crystallization and modification of crystals under the subsequent low-temperature annealing.…”

Section: Resultsmentioning

confidence: 99%

“…DC magnetron sputtering is the most commercially attractive method for preparing the VO x film. In our previous work [11], the method of low temperature deposition (250…300°C) with the following low temperature annealing (300°C) was proposed for high-ordered VO 2 phase formation [12] and VO x film synthesis with the high TCR value (~7%/ K) [13].…”

Section: Introductionmentioning

confidence: 99%

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient

Sabov¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract.A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V 2 O 3 phase inclusions have been fabricated on silicon and silica substrates at the temperature 200°C by using the direct current reactive magnetron sputtering method in controlled Ar/O 2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO 2 and V 2 O 5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VO x (at x  2) film with the TCR close to 7.0%/°C.

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“…Potential applications of the material include advanced optical devices and thermochromic smart windows [8][9][10][11][12]. Synthesis of the material commonly requires temperatures exceeding 200 • C [9,[12][13][14][15][16][17][18]. In the literature, VO 2 films have typically been deposited on fused quartz (high purity SiO 2 ), monocrystalline Si, or other substrates that are not favorable for widespread usage of the material [9,[13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%