Low temperature model of current gain versus the doping concentration of the base in silicon bipolar transistors

Abstract

An expression for the current gain H FE of a bipolar transistor versus the doping concentration N B in the base at low temperature is presented. It is concluded that current gain continues to decrease with increasing N B when N B > No at low temperature. This result is the opposite to that at room temperature. This will provide a good basis for the rational design of bipolar transistors for low temperature operation.