Low-temperature optical properties of hydrogenated amorphous silicon

Ravindra, Nuggehalli M.; Narayan, J.; Ance, C.; Dechelle, F.; Ferraton, J.P.

doi:10.1016/0167-577x(86)90066-2

Cited by 2 publications

(1 citation statement)

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“…The energies corresponding to the features in the variations of n and k, with energy, for monolayer and bulk TMDCs are summarized in Table II. The nature of the bandgap, direct or indirect, is generally determined by the absorption spectra [18,19]. While a variety of approaches to the determination of energy gap of semiconductors have been detailed in the literature, the various functional forms of the spectral dependence of the absorption coefficient have been utilized to determine the value of the band gap as well as its nature -direct or indirect.…”

Section: Optical Propertiesmentioning

confidence: 99%

Electronic & Optical properties of Transition-Metal Dichalcogenides

Tang¹,

Rassay²,

Ravindra³

2017

Madridge J Nanotechnol Nanosci

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Transition-metal dichalcogenides (TMDCs) have emerged as a new class of semiconductors that display distinctive properties at the monolayer thickness. Their electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. In the first part of this study, the temperature dependence of the energy gap of TMDCs (MoS 2 , MoSe 2 , WS 2 and WSe 2 ) for monolayers is discussed. The second part focuses on the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.5-3.0 eV by MATLAB simulations. The optical bandgaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. Case studies of the simulation of the optical properties of these materials on silicon, gold and fused silica substrates are presented.

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Section: Optical Propertiesmentioning

confidence: 99%