Low‐Temperature PECVD of Nanodevice‐Grade nc‐3C‐SiC

Cheng, Qijin; Xu, Shuyan; Long, Jidong; Ostrikov, Kostya Ken

doi:10.1002/cvde.200706624

Cited by 17 publications

(7 citation statements)

References 31 publications

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“…However, with the increased hydrogen dilution ratio X, the C-based weak or strained near-surface bonds (such as sp 2 C or sp 3 C) are more easily and effectively etched away from the growth surface by the hydrogen radicals compared to the Si-based strained bonds (such as sp 3 Si). 36,37 In addition to this, the C-based radicals have a lower sticking coefficient than the Si-based radicals. 21 These considerations explain the experimental results that smaller numbers of carbon atoms are incorporated into the films at a higher value of X.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Cheng

Tam

Xu³

et al. 2010

Nanoscale

100

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Nanophase nc-Si/a-SiC films that contain Si quantum dots (QDs) embedded in an amorphous SiC matrix were deposited on single-crystal silicon substrates using inductively coupled plasma-assisted chemical vapor deposition from the reactive silane and methane precursor gases diluted with hydrogen at a substrate temperature of 200 degrees C. The effect of the hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen-to-silane plus methane gases), ranging from 0 to 10.0, on the morphological, structural, and compositional properties of the deposited films, is extensively and systematically studied by scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, Fourier-transform infrared absorption spectroscopy, and X-ray photoelectron spectroscopy. Effective nanophase segregation at a low hydrogen dilution ratio of 4.0 leads to the formation of highly uniform Si QDs embedded in the amorphous SiC matrix. It is also shown that with the increase of X, the crystallinity degree and the crystallite size increase while the carbon content and the growth rate decrease. The obtained experimental results are explained in terms of the effect of hydrogen dilution on the nucleation and growth processes of the Si QDs in the high-density plasmas. These results are highly relevant to the development of next-generation photovoltaic solar cells, light-emitting diodes, thin-film transistors, and other applications.

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Section: Discussionmentioning

confidence: 99%

“…Physical mechanisms for the effective crystallization of nanocrystalline silicon or nanocrystalline cubic silicon carbide in high-density inductively coupled plasmas completely without hydrogen precursor gas or at low hydrogen dilution ratios X have been investigated previously. 14,31,36,39…”

Section: Discussionmentioning

confidence: 99%

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Cheng

Tam

Xu³

et al. 2010

Nanoscale

100

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“…Recently, it was shown that low-frequency (460 kHz) inductively coupled plasma (ICP) CVD possesses a number of advantages for the fabrication of nanostructured silicon carbide films [17][18][19][20][21][22]. The low-frequency ICP system working in the H-mode discharge features low plasma sheath potentials at the deposition substrate, provides an independent control of the ion/radical fluxes and ion-bombarding energy and makes it possible to generate quiescent and stable plasmas with densities 1-2 orders of magnitude higher than in capacitive discharges [23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Cheng

Long

et al. 2008

J. Phys. D: Appl. Phys.

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It is commonly believed that in order to synthesize high-quality hydrogenated amorphous silicon carbide (a-Si1−xCx : H) films at competitive deposition rates it is necessary to operate plasma discharges at high power regimes and with heavy hydrogen dilution. Here we report on the fabrication of hydrogenated amorphous silicon carbide films with different carbon contents x (ranging from 0.09 to 0.71) at high deposition rates using inductively coupled plasma (ICP) chemical vapour deposition with no hydrogen dilution and at relatively low power densities (∼0.025 W cm−3) as compared with existing reports. The film growth rate Rd peaks at x = 0.09 and x = 0.71, and equals 18 nm min−1 and 17 nm min−1, respectively, which is higher than other existing reports on the fabrication of a-Si1−xCx : H films. The extra carbon atoms for carbon-rich a-Si1−xCx : H samples are incorporated via diamond-like sp3 C–C bonding as deduced by Fourier transform infrared absorption and Raman spectroscopy analyses. The specimens feature a large optical band gap, with the maximum of 3.74 eV obtained at x = 0.71. All the a-Si1−xCx : H samples exhibit low-temperature (77 K) photoluminescence (PL), whereas only the carbon-rich a-Si1−xCx : H samples (x ≥ 0.55) exhibit room-temperature (300 K) PL. Such behaviour is explained by the static disorder model. High film quality in our work can be attributed to the high efficiency of the custom-designed ICP reactor to create reactive radical species required for the film growth. This technique can be used for a broader range of material systems where precise compositional control is required.

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“…Growth of the Single crystalline SiC films is usually realized only at high growth temperature greater than 1000 C [3]. owing to the lattice mismatch (20%) and the difference in the thermal expansion coefficient (8%) between SiC and Si, it is quite likely generating a residual stress and a high density of interface defects when the processing temperatures are very high [4]. However, several applications can benefit from heteroepitaxial system.…”

Section: Introductionmentioning

confidence: 99%

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Astuti

Rahman

Tanikawa

et al. 2015

J. Nat. Scien. & Math. Res.

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Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H2) as carrier gas. The substrate temperature, tungsten mesh temperature, H2 flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO2/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO2/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

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Low‐Temperature PECVD of Nanodevice‐Grade nc‐3C‐SiC

Cited by 17 publications

References 31 publications

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

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