Low-temperature phase transition of ZnS: The critical role of ZnO

Lin, Po Chang; Hua, Chi C.; Lee, Tai Chou

doi:10.1016/j.jssc.2012.05.017

Cited by 18 publications

(7 citation statements)

References 43 publications

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“…The positions of peaks characteristic of the ZnO hexagonal wurtzite structure are marked with dashed black lines while those indicative of the ZnS cubic zinc blende structure are marked with dashed red lines. These phases are the most stable for ZnO and ZnS, respectively [ 32 , 33 ]. The TAA1.5 sample exhibits peaks characteristic of ZnO.…”

Section: Resultsmentioning

confidence: 99%

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

et al. 2018

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ZnO/ZnS heterostructures have emerged as an attractive approach for tailoring the properties of particles comprising these semiconductors. They can be synthesized using low temperature sol-gel routes. The present work yields insight into the mechanisms involved in the formation of ZnO/ZnS nanostructures. ZnO colloidal suspensions, prepared by hydrolysis and condensation of a Zn acetate precursor solution, were allowed to react with an ethanolic thioacetamide solution (TAA) as sulfur source. The reactions were monitored in situ by Small Angle X-ray Scattering (SAXS) and UV-vis spectroscopy, and the final colloidal suspensions were characterized by High Resolution Transmission Electron Microscopy (HRTEM). The powders extracted at the end of the reactions were analyzed by X-ray Absorption spectroscopy (XAS) and X-ray diffraction (XRD). Depending on TAA concentration, different nanostructures were revealed. ZnO and ZnS phases were mainly obtained at low and high TAA concentrations, respectively. At intermediate TAA concentrations, we evidenced the formation of ZnO/ZnS heterostructures. ZnS formation could take place via direct crystal growth involving Zn ions remaining in solution and S ions provided by TAA and/or chemical conversion of ZnO to ZnS. The combination of all the characterization techniques was crucial to elucidate the reaction steps and the nature of the final products.

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Section: Resultsmentioning

confidence: 99%

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

et al. 2018

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“…The ZnO 1– x S x film, however, consists of two phases when the S/(S+O) ratio is 0.5 (Supporting Information, Figure S1). The composition range in which homogeneous alloys are formed depends not only on the growth temperature, but also probably on the specific technique used for preparation of the material (i.e., nonequilibrium effects play an important role). − The specific mechanisms for the zinc blend and wurtzite structure between the ZnS and ZnO have been proposed from the perspective of thermodynamic stability …”

Section: Resultsmentioning

confidence: 99%

“…22−24 The specific mechanisms for the zinc blend and wurtzite structure between the ZnS and ZnO have been proposed from the perspective of thermodynamic stability. 25 Optical spectroscopy showed the dependence of the E g on the sulfur content of ZnO 1−x S x thin films. The ZnO 1−x S x alloy film is referred to as a material with isovalent impurities.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se₂ Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing

Kim

et al. 2015

ACS Appl. Mater. Interfaces

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We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

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“…Wurtzite is a high-temperature phase formed from sphalerite when heated to 1020 • C [3]. The phase transition temperature can be significantly reduced by reducing the size of ZnS samples to nanoscale [4] or bringing sphalerite nanoparticles into contact with wurtzite-like ZnO nanoparticles [5]. According to theoretical estimations, the difference in the formation energies between wurtzite and sphalerite ZnS is negligibly small (∼ 3.25 meV/atom) [6].…”

Section: Introductionmentioning

confidence: 99%

Effect of nitrogen impurities on ZnS polymorphism

Popov¹,

Ворох²,

Enyashin³

2019

Nanosystems: Phys. Chem. Math.

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The ZnS polymorphs-sphalerite and wurtzite-have the very close formation energies, setting their coexistence in nature. Moreover, numerous cases of a disordered phase formation based on these polymorphs have been registered. However, sphalerite is a common mineral, while wurtzite is rare. Perhaps the wider distribution of sphalerite can be explained by means of stabilizing effect from impurities. In this paper, the most stable form and the localization of nitrogen impurities in both ZnS polymorphs is screened using the methods of quantum chemistry. The influence of impurity on polymorphic wurtzite-sphalerite equilibrium is disclosed. According to the obtained results, the introduction of nitrogen impurities facilitates the domination of sphalerite over wurtzite.

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Low-temperature phase transition of ZnS: The critical role of ZnO

Cited by 18 publications

References 43 publications

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se₂ Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing

Effect of nitrogen impurities on ZnS polymorphism

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Low-temperature phase transition of ZnS: The critical role of ZnO

Cited by 18 publications

References 43 publications

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing

Effect of nitrogen impurities on ZnS polymorphism

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Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se₂ Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing