Low temperature photo-physics of single NV centers in diamond

Abstract

We investigate the magnetic field dependent photo-physics of individual Nitrogen-Vacancy (NV) color centers in diamond under cryogenic conditions. At distinct magnetic fields, we observe significant reductions in the NV photoluminescence rate, which indicate a marked decrease in the optical readout efficiency of the NV's ground state spin. We assign these dips to excited state level anti-crossings, which occur at magnetic fields that strongly depend on the effective, local strain environment of the NV center. Our results offer new insights into the structure of the NVs' excited states and a new tool for their effective characterization. Using this tool, we observe strong indications for strain-dependent variations of the NV's orbital g-factor, obtain new insights into NV charge state dynamics, and draw important conclusions regarding the applicability of NV centers for low-temperature quantum sensing.

Non-invasive imaging of three-dimensional integrated circuit activity using quantum defects in diamond

“…We use nanoscale nitrogenvacancy (NV) centres in diamond [19,20] which offer the unique property to probe all three vectorial components of a magnetic field simultaneously [21,22]. Besides, NV centres operate under a wide span of external conditions [23][24][25][26][27], demonstrate excellent sensitivity to magnetic fields [28,29] and enable nanoscale spatial resolution [30]. Pioneering work successfully demonstrated IC activity imaging [31,32] but has been so far restricted to a twodimensional study.…”