Low temperature photoluminescence characteristics of carbon doped GaAs

Kim, Seong‐Il; Kim, Moo‐Sung; Kim, Yong; Eom, Kyung Sook; Min, Seung-Kee; Lee, Choochon

doi:10.1063/1.352740

Cited by 27 publications

(9 citation statements)

References 9 publications

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“…In this figure, we have also plotted the reported results for Zn, Be, and C doped GaAs measured at temperatures between 4.2 and 77 K, as the band gap shrinkage is independent of temperature [9,20]. The measured band gap shrinkage of carrier concentration of Be, C, and Zn-doped GaAs, exhibited consistent agreement between each other [9,14,18,24,25,28,37]. Fig.…”

Section: Band Gap Shrinkage Due To Doping Effectsupporting

confidence: 60%

Low temperature photoluminescence properties of Zn-doped GaAs

Hudait

Modak

Rao

et al. 1998

Materials Science and Engineering: B

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Dimethylzinc (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic chemical vapor deposition (MOCVD). The influence of growth parameters, such as, DMZn mole fractions, growth temperature, trimethylgallium (TMGa) mole fractions, substrate surfaces on the Zn incorporation have been studied. The surface morphology of the layers was measured by scanning electron microscopy (SEM). The hole concentrations and zinc (Zn) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage (ECV) profiler, and low temperature photoluminescence (LTPL) spectroscopy as functions of hole concentration (10 17 −1.5×10 20 cm − 3 ) and experimental temperatures (4.2 -300 K). The hole concentration increases with increasing DMZn and TMGa mole fractions and decreases linearly with increasing growth temperature. The main PL peak shifted to lower energy and the full width at half maximum (FWHM) increased with increasing hole concentration. An empirical relation for FWHM, DEp, band gap, Eg, and band gap shrinkage, DEg in Zn doped GaAs as a function of hole concentration were obtained. These relations are considered a useful tool to determine the hole concentration in Zn doped GaAs by low temperature PL measurement. The hole concentration increases with increasing TMGa mole fraction and the main peak is shifted to lower energy side.

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Section: Band Gap Shrinkage Due To Doping Effectsupporting

confidence: 60%

Low temperature photoluminescence properties of Zn-doped GaAs

Hudait

Modak

Rao

et al. 1998

Materials Science and Engineering: B

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“…The luminescence properties are dependent on the growth conditions (or methods), impurity species, doping concentrations and growth temperatures. PL spectroscopy has also been employed to investigate the Fermi level of heavily n-type doped materials [6,10], the carrier concentration [27] and the epitaxial layer quality [28]. The effect of growth parameters, such as SiH 4 mole fraction, growth temperature, arsine (AsH 3 ) and trimethylgallium (TMGa) mole fractions on Si incorporation in GaAs are investigated thoroughly and these results are compared with the published literatures [5,[29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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Silane (SiH 4 ) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH 3 ) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH 4 mole fraction, growth temperature, TMGa and AsH 3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SiH 4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH 3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10 17 −1.). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL,. We also obtained an empirical relation for the band gap shrinkage, DE g in Si-doped GaAs as a function of electron concentration. The value of DE g (eV) = −2.75×10 − 8 n 1/3 , indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH 3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model.

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“…16 Kim et al performed a similar analysis for C-doped samples at 12 K and proposed imperial relations for hole concentration estimations based on the FWHM of the PL peaks. 17 Optical pump terahertz probe spectroscopy has been used to estimate the doping a)…”

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confidence: 99%

Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Arab

Yao

Zhou

et al. 2016

Applied Physics Letters

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In this letter, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our measurements indicate that an increase in carrier concentration leads to an increase in the complexity of the doping mechanism, which we attribute to the formation of different recombination centers. At high carrier concentrations, we observe a blueshift of the effective band gap energies by up to 25 meV due to the Burstein-Moss shift. Based on the full width at half maximum (FWHM) of the photoluminescence peaks, we estimate the carrier concentrations for these nanowires, which varies from 6 × 1017 cm−3 (lightly doped), to 1.5 × 1018 cm−3 (moderately doped), to 3.5 × 1018 cm−3 (heavily doped) as the partial pressure of the disilane is varied from 0.01 sccm to 1 sccm during the growth process. We find that the growth temperature variation does not affect the radiative recombination mechanism; however, it does lead to a slight enhancement in the optical emission intensities. For GaAs nanowire arrays measured at room temperature, we observe the same general dependence of band gap, FWHM, and carrier concentration on doping.

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Low temperature photoluminescence characteristics of carbon doped GaAs

Cited by 27 publications

References 9 publications

Low temperature photoluminescence properties of Zn-doped GaAs

Low temperature photoluminescence properties of Zn-doped GaAs

Si incorporation and Burstein–Moss shift in n-type GaAs

Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

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