Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy

Bignazzi, A.; Grilli, E.; Guzzi, M.; Radice, Marcela; Bosacchi, A.; Franchi, S.; Magnanini, R.

doi:10.1016/s0022-0248(96)00441-1

Cited by 12 publications

(11 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14 Therefore, we can roughly assign the activation energy of Te donors as E D ϭ 2 meV, which coincides with values reported elsewhere. 15 This assumption is reasonable because the quaternary GaInAsSb solid solution is heavily compensated with Te and, according to our Hall effect measurements, exhibits near intrinsic conductivity at low temperatures (T Ͻ 30 K), whereas it has n-type conductivity at high temperatures (T Ͼ 70 K). The transformation of the recombination mechanism from electron-acceptor to donor-acceptor can occur because of the more shallow donors becoming populated with decreasing temperature (below 30 K).…”

Section: Resultssupporting

confidence: 56%

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Moiseev

Krier

Yakovlev

2004

Journal of Elec Materi

View full text Add to dashboard Cite

Photoluminescence (PL) has been observed at room temperature from a Ga 0.96 In 0.04 As 0.11 Sb 0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga 0.96 In 0.04 As 0.11 Sb 0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range Ͻ150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

show abstract

Section: Resultssupporting

confidence: 56%

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Moiseev

Krier

Yakovlev

2004

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…The PL spectra measured at 10 K and registered for all samples are dominated by the exciton transitions: the peaks assigned to the bound-exciton (BE) transition are located at 0.796 to − 0.798 eV, while freeexciton (FE) peaks are placed at 0.807-0.809 eV [21]. The FE peak is a clear demonstration of high material quality.…”

Section: Optimization Of Gasb Growthmentioning

confidence: 95%

“…There are also peaks located at 0.780-0.790 eV assigned to a donor-acceptor transitions and barely visible conduction band-acceptor transition at around 0.760 eV [19]. The direct energy gap of GaSb material is reported to be between 0.811 and 0.815 eV [21]. An exemplary PL spectrum for the sample #5 is presented in Fig.…”

Section: Optimization Of Gasb Growthmentioning

confidence: 96%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

View full text Add to dashboard Cite

A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger's circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger's vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM 2θ/ω = 42 arcsec, FWHM RC = 125 arcsec. The EPD = 4 × 10 6 cm − 2 was estimated after etching in FeCl 3 :HCl solution. The Δq z /Δq x ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were: p = 4.0 × 10 16 cm −3 (2.0 × 10 16 cm −3 ) and µ = 599 cm 2 /V s (3420 cm 2 /V s) at 300 K (77 K).

show abstract

“…In another study, buffer layers were used to reduce the defect concentrations [35]. Clearly, high-quality MBE-grown GaSb, which demonstrates higher carrier mobility, can be obtained by the optimization of the growth conditions [33][34][35][36]. More importantly, PL measurements can serve to determine the transitions that occur in good quality GaSb materials [33].…”

Section: Gasb Emission Propertiesmentioning

confidence: 99%

“…Additionally, the transition energy may be caused by a concentration of unintentionally incorporated donors, strain effects, or competing free-to-bound and donor-acceptor transitions. More recently, researchers found that the free electron to hole bound to unidentified acceptor transition could dominate recombination after Te doping of GaSb, particularly at high doping levels [36]. Since then, the PL properties caused by doping effects have attracted scientific and technological interest motivated by optoelectronic device design considerations [37].…”

Section: Gasb Emission Propertiesmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

View full text Add to dashboard Cite

Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

show abstract

Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy

Cited by 12 publications

References 30 publications

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

Contact Info

Product

Resources

About