Low-temperature photoluminescence spectra of doped Ge

Chen, Min; Smith, D. L.; McGill, T. C.

doi:10.1103/physrevb.15.4983

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…1͑c͔͒. The PL spectrum depicts a broad, double-peak feature with a major peak centered at a photon energy of 0.75 eV, and this photon energy is close to the crystalline Ge ͑c-Ge͒ bandgap at 4 K. 21 The second PL peak is found at ϳ0.85 eV. These samples have the highest ͑at least several percent͒ quantum efficiency as compared to the other samples presented here.…”

mentioning

confidence: 56%

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Kamenev

Tsybeskov

Baribeau

et al. 2004

Applied Physics Letters

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We report detailed Raman and photoluminescence (PL) measurements in Si/Si1−xGex nanostructures grown by molecular-beam epitaxy under conditions of near Stranski–Krastanov (S-K) growth mode. In a series of samples with x controllably increased from 0.098 to 0.53, we observe that an increase in Raman signal related to Ge–Ge vibrations clearly correlates with (i) a redshift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that in S-K Si/Si1−xGex nanostructures with x>0.5 Ge atoms form nanometer-sized clusters with a nearly pure Ge core and a SiGe shell.

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mentioning

confidence: 56%

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Kamenev

Tsybeskov

Baribeau

et al. 2004

Applied Physics Letters

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“…The PL spectrum in the samples with an average Ge composition close to 53% (Figure 3(c)) depicts a broad feature with a major PL peak centered at a photon energy of 0.75 eV, and this peak energy is close to the band gap of crystalline Ge (c-Ge) at 4 K [49]. A second PL peak is found at ∼0.85 eV.…”

Section: Optical Properties Of Si/sige Three-dimensional Nanostructuresmentioning

confidence: 92%

Three‐Dimensional Silicon‐Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

Tsybeskov

Lee

Chang

et al. 2008

Advances in Optical Technologies

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Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3–1.6 μm. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.

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Experimental Investigations of Electron‐Hole Plasma in Tellurium‐Doped Gap

Schwabe

Streit

Thuselt

et al. 1983

Physica Status Solidi (b)

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Photoluminescence spectra are measured for GaP doped with tellurium in the density range of 2 x IOl7 to 5 x lOls cm+ a t low temperatures. At low doping concentrations and high excitation a n electron-hole liquid is observed only weakly influenced by the impurities. An obvious feature that emerges in intermediately doped samples is the coexistence of two plasma-like phases, in qualitative agreement with theoretical expectations. The results obtained from the spectra are supported by decay measurements. Further, from the decay times also Auger coefficients are determined.Es werden Photolumineszenzspektren von Gap-Proben mit Tellurdotierungen zwischen 2 x 10' ' und 5 x l0lB cmTS bei tiefen Temperaturen gemessen. Bei niedrigen Dotierungskonzentrationen und hoher Anregung wird cine Elektron-Loch-Flussigkeit beobachtet., die nur schwach von den Storstellen beeinflu& ist. Ein augenfdliges Merkmal, das in Proben mittlerer Dotierung hervortritt, ist die Koexistenz zweier plasmaartiger Phasen. Dies steht in qualitativer Ubereinstimmung mit theoretischen Erwartungen. Die aus den Spektren erhaltenen Resultate werden durch Abklingmessungen gestutzt. Weiterhin werden aus den Abklingzeiten Auger-Koeffizienten bestimmt.

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Low-temperature photoluminescence spectra of doped Ge

Cited by 11 publications

References 26 publications

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Three‐Dimensional Silicon‐Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

Experimental Investigations of Electron‐Hole Plasma in Tellurium‐Doped Gap

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