2002
DOI: 10.1002/pssc.200390069
|View full text |Cite
|
Sign up to set email alerts
|

Low Temperature Photoluminescence, Transient Photoconductivity and Microwave Reflection for Optical Properties and Transport in PLD‐GaN

Abstract: Optical and transport data on GaN samples grown by low-temperature pulsed laser deposition are presented. Large below-gap band tails are observed in optical absorption spectroscopy. The most intense photoluminescence lines of medium crystalline quality samples can be attributed to excitons bounded to stacking faults. The samples of the highest quality show, besides the ubiquitous yellow band, a large near band emission (NBE) peaking at 3.47 eV. The large width of the NBE is attributed to the joint effects of t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 10 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?