Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films

Potts, SE Stephen; Keuning, W.; Langereis, E Erik; Dingemans, G Gijs; Sanden, van de Mcm Richard; Kessels, Wmm Erwin

doi:10.1149/1.3428705

Cited by 167 publications

(143 citation statements)

References 44 publications

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“…In the present work, the TTIP vapor pressure was higher than in Ref. 42the precursor source temperature, and the process pressure were 65 C and about 750 mTorr in this case compared with 45 C and 7.5-100 mTorr in the case of Ref. 42.…”

Section: Water Processcontrasting

confidence: 51%

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Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 C) were used to grow moisture barrier TiO 2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å /cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO 2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO 2 , but the deposition time could be reduced using SALD. The TiO 2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 Â 10 À4 g day À1 m À2 (38 C and 90% RH) was measured for 20 nm of TiO 2 film deposited by plasma-assisted ALD.

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Section: Water Processcontrasting

confidence: 51%

“…42the precursor source temperature, and the process pressure were 65 C and about 750 mTorr in this case compared with 45 C and 7.5-100 mTorr in the case of Ref. 42. The refractive index increased with increasing water pulse length and reached a saturation at 1.5-2 s for all the three deposition temperatures.…”

Section: Water Processmentioning

confidence: 71%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This is a result of several studies that demonstrated the merits offered by plasma-assisted ALD, such as improved material properties, higher throughput, additional control over material properties, more freedom in precursors and processes, and facilitated deposition at reduced substrate temperatures. [1][2][3] For thermal ALD of metal oxides typically H 2 O vapor, O 2 gas, or O 3 are employed for the oxidation reactions, whereas during plasmaassisted ALD the oxidation reaction of the surface and ligands is driven by reactive radical species present in the O 2 plasma. However, besides radicals, additional species such as electrons, ions, and photons are present in the plasma.…”

mentioning

confidence: 99%

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

Profijt

Kudlacek

Sanden

et al. 2011

J. Electrochem. Soc.

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The influence of ions and photons during remote plasma atomic layer deposition (ALD) of metal oxide thin films was investigated for different O 2 gas pressures and plasma powers. The ions have kinetic energies of 35 eV and fluxes of $10 12 -10 14 cm À2 s À1 toward the substrate surface: low enough to prevent substantial ion-induced film damage, but sufficiently large to potentially stimulate the ALD surface reactions. It is further demonstrated that 9.5 eV vacuum ultraviolet photons, present in the plasma, can degrade the electrical performance of electronic structures with ALD synthesized metal oxide films.

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“…An overlap in the temperature windows is very important to ensure good ALD growth for such materials. 19 Most recently, thermal ALD was employed by Klepper et al to prepare Co 3 O 4 thin films by using Co(thd) 2 (Hthd ¼ 2,2,6,6-tetramethylheptan-3,5-dione) as a cobalt precursor in combination with O 3 . 17,18 A list of cobalt precursors of interest for CVD/ALD processes reported in the literature is presented in Table I.…”

mentioning

confidence: 99%