2013
DOI: 10.1109/led.2013.2266331
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Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILC

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Cited by 20 publications
(10 citation statements)
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“…Compared with planar TFETs which is fabricated with the same processes, there is no doubt that the proposed structure is effective to improve electrical performance. However, the measured results imply that it requires further optimization for the better performance than the other strategies [25,26,27,28,29,30,31,32,33,34,35,36,37]. Therefore, the proposed TFET’s feasibility for the better performance is examined by TCAD simulations using Synopsys Sentaurus™.…”
Section: Discussionmentioning
confidence: 99%
“…Compared with planar TFETs which is fabricated with the same processes, there is no doubt that the proposed structure is effective to improve electrical performance. However, the measured results imply that it requires further optimization for the better performance than the other strategies [25,26,27,28,29,30,31,32,33,34,35,36,37]. Therefore, the proposed TFET’s feasibility for the better performance is examined by TCAD simulations using Synopsys Sentaurus™.…”
Section: Discussionmentioning
confidence: 99%
“…In other words, the subthreshold swing (S.S.) should be lowered to reduce threshold voltage (V TH ) at a reasonable off-leakage. Replacing the carrier conduction mechanism of poly-Si TFTs with band-to-band tunneling (BTBT) can greatly reduce the leakage current and S.S. [3]. Accordingly, the operating power and the standby power can be effectively lowered at the same time.…”
Section: Introductionmentioning
confidence: 99%
“…Content may change prior to final publication. Citation information: DOI 10.1109/LED.2015.2468060, IEEE Electron Device Letters (MILC) channel film [3]. Yet the relation between interface (N it ) and bulk (N GB ) trap densities and the characteristics of TFETs has not been experimentally studied.…”
Section: Introductionmentioning
confidence: 99%
“…These TFET features are essential to realize low power dissipation in applications such as active matrix liquid crystal displays. Though multigrain thin film TFETs have been demonstrated [13], [14], their inherent multigrain nature in the channel region degrades their performance. Therefore, in this letter, we report for the first time, a single GB TFET as a potential candidate for TFT applications.…”
Section: Introductionmentioning
confidence: 99%