ICM 2001 Proceedings. The 13th International Conference on Microelectronics. 2001
DOI: 10.1109/icm.2001.997492
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Low temperature polysilicon growth on glass suitable for TFT fabrication

Abstract: Polysilicon films are grown on ordinary glass substrates at temperatures as low as 380°C using a novel ultraviolet assisted metal-induced-crystallization technique. The silicon films grown using this method are suitable for the fabrication of thin film transistors. Samples prepared, consist of 15008, of silicon film deposited on 10008, silicon nitride and 2000A of chromium layers, and Ni is used as the seed for crystallization. Annealing occurred in the presence of an ultra-violet exposure, leads to a high cry… Show more

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