Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium

Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene

“…Characteristic Ru peaks for 3d 3/2 and 3d 5/2 locate at 284 and 280 eV. These peak positions are in agreement with those earlier observed in different studies on Ru films [18,19,25,44,45]. The profiles of the Ru peaks indicate that the influence of the residual carbon is weak, i.e.…”

“…To mention a few, (2,4-dimethylpentadienyl) (ethylcyclopentadienyl)ruthenium [24], bis (2,4-dimethylpentadienyl) ruthenium [25], triruthenium dodecacarbonyl [9] and bis(2,2,6, 6-tetramethyl-heptane-3,5-dionato)(1,5-cyclooctadiene)ruthenium [26], have been applied as Ru precursors in CVD process. Bis(cyclopentadienyl)ruthenium [18][19][20], bis(ethylcyclopentadienyl)ruthenium [19,27], N,N-dimethyl-1-ruthenocene [28], 2,4-(dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium, i.e.…”

“…DER [29], (methylcyclopentadienyl)(pyrrolyl)ruthenium [15] or isopropylmethylbenzene-cyclohexadiene-ruthenium [2] have been adapted to ALD processes. Ru films can be grown via reduction of the precursor in hydrogen-assisted thermal process [21] or by using NH 3 plasma [19,27], but mostly the films have been grown via oxidative decomposition of the metal precursor in a continuous or pulsed oxygen flow [18,20,21,24,25].…”

Nano-Structured Oxides for the Next Generation of Electrooptic Devices

“…It is not easy to achieve geometrically the required capacitor area (and requisite switched charge for the sense amplifiers to discriminate between a "1" and a "zero") while having such a small area projected onto the plane of the chip. The ways of doing this include both ultra-lithography and selfassembly techniques [2,3], and they consist of dielectrically coated trenches [4,5] and nano-tubes [6], and the use of nano-wires such as ZnO [7][8][9] or multiwalled carbon nano-tubes (MWCNTs) conformally coated with oxides [10]. An alternative scheme is to use ferroelectric films as the gate in field effect transistors [11,12], but these suffer from retention loss (diminishing stored charge) due to the need to ground the gate during read operations.…”

Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta

“…CVD Ru films have been deposited using a number of organometallic precursors, including the carbonyl-containing compounds, such as Ru 3 (CO) 12 [2,3]; b-diketonate complexes, such as Ru(dpm) 3 (dpm = dipivaloylmethanate) [4]; pyrazolate-containing compounds, such as Ru(CO) 3 (3,5-bis(trifluoromethyl) pyrazole) [5]; and the family of compounds containing cyclopentadienyl and pentadienyl ligands, such as Ru(Cp) 2 (Cp = cyclopentadienyl) [6,7], Ru(EtCp) 2 (EtCp = ethylcyclopentadienyl) [8,9], and Ru (DMPD) 2 (DMPD = 2,4-dimethylpentadienyl) [10]. All of the aforementioned precursors are solid at room temperature, except for Ru(EtCp) 2 .…”