Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

“…Thin film transistors based on amorphous oxide films (OxTFTs) have attracted tremendous interest as TFT backplanes in active-matrix organic light emitting diodes (OLEDs) and liquid crystal displays owing to their high mobilities. [1][2][3][4][5][6][7] Intensive developments on oxide compounds including InO x -based, [8][9][10][11][12][13] ZnO x -based, 14 SnO x -based 15 and mixed channel materials such as InZnO x -based OxTFTs [16][17][18][19][20][21][22][23][24][25] have been widely studied in OxTFTs in recent decades because of their excellent electrical stabilities and high mobilities. Among them, InGaZnO (IGZO) 1,2,26 and InSnZnO (ITZO) 18,19 are currently being developed for use as commercial TFT backplanes because of their superior properties and high electron mobilities.…”

“…35 The stability of vacancies could depend on the metal-oxygen bonding, characterized as the bond-dissociation energy. Because Zn-O (bond-dissociation energy = 159 kJ/mol) has a relatively low bond-dissociation energy compared with In-O (320 kJ/mol), high bond-dissociation energy metals were introduced into the high mobility amorphous InO x films, such as W-InO 8,9 and Si-InO. 10,11 Here, using the high dissociation energy dopant, Hf-O (820 kJ/mol), we investigated a simple semiconducting material, Hf-InO x , with relatively low annealing temperatures (150-250…”

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

“…4,10 In addition, a-IGZO TFTs are susceptible to atmosphere such as oxygen and moisture, 24,25 and have problems in long-term stability 24 for which the mechanism is not yet clear and under debate for years. 26 Therefore, we recently proposed an alternative idea on development of In-Si-O (ISO) 7,8 and In-W-O (IWO) 10,11 transistors in which the doped acidic oxides have much stronger bond dissociation energy and are more rigid to acid, and found that the doped amorphous TFTs inert to oxygen remained electrically stable even without any passivation layer which can reduce production cost.…”

“…With a rapid development of oxide semiconductors since Hosono's frontier works, 1,2 the current trend of TFT application is to employ amorphous oxide semiconductors (AOSs) instead of widely used hydrogenated amorphous silicon (a-Si:H) as the active channel layer for next generation FPDs with high resolution (at least 2k  4k), fast frame rate (>120 Hz), and large panel size, which require the TFTs have carrier mobility larger than 3 cm 2 /Vs. 3,4 So far, many indium oxide (InOx-) based AOSs such as In-O, 5 In-Ga-O, 6 In-Si-O, 7,8 In-Sn-O, 9 In-W-O, 7,10,11 In-Zn-O, 12 and multi-component In-Ga-Zn-O, 2, [13][14][15] In-Hf-Zn-O, 16 In-Sc-Zn-O, 17 In-Si-Zn-O, 18 In-Sn-Zn-O, 19 In-W-Zn-O, 20 In-Zr-Zn-O, 21 etc., have been studied as the channel layers of TFTs because of their high electron mobilities. 4,22 Amongst, the amorphous In-Ga-Zn-O (a-IGZO) has been received particular attention and been used to demonstrate large-size high-definition prototype FPDs.…”

Effective silicon nanowire arrays/WO3 core/shell photoelectrode for neutral pH water splitting

“…Unfortunately, these strategies have not been able to sufficiently address the major inherent drawback of WO 3 (large band gap Eg2.6 eV) [18], which largely limits its absorbance and photocatalytic activity. Considerable efforts have been made to expand the spectral response of WO 3 , such as elemental doping (e.g., C, In, and N) [19][20][21] and sensitizing with narrow band gap semiconductors (e.g., CdS, PbS, and Bi 2 S 3 ) [22][23][24]. Therefore, developing WO 3 -based nanostructured heterojunction photoanodes with superior light absorbance property can greatly promote its application in the PEC water splitting process.…”