Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors

Hanna, B.F.; Surendran, Kuzhichalil Peethambharan; Unni, K. N. Narayanan

doi:10.1039/c8ra07312k

Cited by 49 publications

(4 citation statements)

References 52 publications

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“…The granules in the CNTS films were of different sizes, being about ~59 and 244 nm at 400  C and 350  C, respectively. This difference in the granular size and shapes may have been due to a lack of homogeneity in the thin films [9,10]. The optical properties of the CNTS thin films were verified using the absorbance and transmittance spectra from UV-visible spectroscopy.…”

Section: Resultsmentioning

confidence: 99%

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2NiSnS4 THIN FILMS DEPOSITED BY CHEMICAL SPRAY PYROLYSIS METHOD

BED¹,

BAKR²,

AL-ZANGANAWEE³

2020

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In this study, Cu2NiSnS4 (CNTS) thin films were deposited on glass substrates at different temperatures of 250, 300, 350 400, and 450 ˚C using the chemical pyrolysis technique. The aim of this research was to study the effect of the substrate temperature on the properties of the films. The structural properties of the films were obtained by X-ray diffraction, Raman spectroscopy, and Field Emission Scanning Electron Microscopy (FESEM); the optical properties were determined by the UV-Vis spectroscopy; and the electrical properties were obtained by observing the Hall Effect. The XRD results showed that the CNTS films had a cubic crystalline structure with (111) being the preferred and most common orientation plane. Raman spectroscopy results showed a distinct peak at 336 cm-1 , which indicated a CNTS quaternary compound. The FESEM results demonstrated the presence of nanoparticles with various shapes and sizes. The optical energy band gap was proven to have a value of 1.57-1.82 eV, for the allowed direct transition, and a high absorption coefficient (≥104 cm-1 ) in the visible spectrum region, thereby indicating the potential application of these thin films in solar cells. The Hall Effect measurement on the CNTS thin films indicated a p-type of conductivity for all films, with the highest charge carrier density and mobility occurring at 350C, which makes them ideal for use in photovoltaic applications.

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Section: Resultsmentioning

confidence: 99%

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2NiSnS4 THIN FILMS DEPOSITED BY CHEMICAL SPRAY PYROLYSIS METHOD

BED¹,

BAKR²,

AL-ZANGANAWEE³

2020

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“…Using sputtering, thermal evaporation, and pulsed laser deposition, numerous groups were able to create γ-CuI thin films. The solution techniques are straightforward and less expensive than vacuum deposition. , In the choice of an n-type counterpart, unipolar conducting semiconductor ZnO with excellent optoelectronic properties, is frequently used in photodetector applications. , For light detection applications, the type II heterojunction can be created utilizing a p- CuI/ n- ZnO-based junction, which can boost the photo-produced charge carriers created by a lower electron–hole recombination rate. Particularly, the photodetectors fabricated from nanostructured materials offer impressive advantages.…”

Section: Introductionmentioning

confidence: 99%

Self-Powered UV Photodetectors Based on Heterojunctions Composed of ZnO Nanorods Coated with Thin Films of ZnS and CuI

Swaminathan

2023

ACS Appl. Nano Mater.

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A simple, inexpensive solution process is used to deposit γ-CuI thin films, and many aspects of the films, such as morphology, crystalline phase, and its optical and electrical properties on annealing are studied. All of the grown films exhibited p-type conductivity and an average transmittance of 70 to 80% in the visible region. The film annealed at 200 °C is observed to be relatively smooth with root-mean-square roughness of 13.25 nm. CuI films annealed at 200 °C displayed a hole mobility of 0.53 cm 2 /Vs and a hole concentration of 8.36 × 10 18 cm −3 . Additionally, the potential of γ-CuI as a p-type material for photodetection is explored by fabricating transparent hybrid ultraviolet (UV) photodetectors based on p-CuI/n-ZnO nanorods and p-CuI/n-ZnS/ZnO nanostructures. The high-resolution transmission electron microscopy (HRTEM) image showed that the ZnO nanorods grew as a single crystal along the [001] direction and smaller CuI attached on their surface. A simple sulfurization procedure has created a poly-nanocrystalline ZnS shell layer over the ZnO nanorods. Crucial photodetector parameters such as responsivity, external quantum efficiency, and detectivity are analyzed with different illumination intensities and incident wavelengths. Under self-powered conditions, upon illumination with 372 nm and intensity of 0.25 mW/cm 2 , the p-CuI/n-ZnO nanorod showed significant responsivity of 25.11 mA/W and detectivity of 4.59 × 10 13 Jones. Insertion of the ZnS layer between the ZnO and CuI has enhanced these parameters to 43.85 mA/W and 3.84 × 10 14 Jones, respectively. This research underlines the potential of p-type CuI as a transparent, high-performance optoelectronic material.

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“…Therefore, PD is a suitable choice for UV monitoring, with advantages of fast response time and simple structure, making them highly desirable for this application. Moreover, p–n junction PD, in particular, is well suited due to its easy fabrication process, low dark current, and low operating voltage …”

Section: Introductionmentioning

confidence: 99%

“…Wide-bandgap metal oxide semiconductors such as ZnO, SnO 2 , TiO 2 , and Ga 2 O 3 are commonly employed to achieve spectral selectivity and high response in UV photodetectors. Among these, ZnO has been actively researched over the past decades due to its abundance, cost-effectiveness, high transparency in the visible region, and superior absorption in the UV region. ,, However, several ZnO-based photodetectors have a disadvantage of extremely slow response speed due to the sensitivity to the absorption and desorption of oxygen. In addition, ZnO exhibits wide absorption in the wavelength range below UVA.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

Ha,

Kang,

Jeong

et al. 2024

ACS Appl. Mater. Interfaces

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We introduce an enhanced performance organic−inorganic hybrid p−n junction photodiode, utilizing poly[bis(4phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 °C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of ∼10 2 in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 × 10 11 Jones, × × cm Hz W 1 ) and exceptional rectification ratio (5.47 × 10 4 at ±1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity.

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Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors

Abstract: Visible-blind ultraviolet photodetectors have been fabricated with a p–n junction based on ZnO and an organic hole transport layer.

Cited by 49 publications

References 52 publications

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2NiSnS4 THIN FILMS DEPOSITED BY CHEMICAL SPRAY PYROLYSIS METHOD

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2NiSnS4 THIN FILMS DEPOSITED BY CHEMICAL SPRAY PYROLYSIS METHOD

Self-Powered UV Photodetectors Based on Heterojunctions Composed of ZnO Nanorods Coated with Thin Films of ZnS and CuI

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

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