Low-temperature pulsed plasma deposition. II. The production of novel amorphous compounds of germanium in thin film

Scarsbrook, G. A.; Llewellyn, Ian P.; Heinecke, R. A.

doi:10.1116/1.576237

Cited by 7 publications

(3 citation statements)

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“…(4) The reaction rate constants, the species and total energy gain and loss rates and their Jacobian are then calculated. (5) The coupled set of species and total energy equations is also integrated for one time step and a new plasma composition and gas temperature are calculated.…”

Section: Plasma Simulation Proceduresmentioning

confidence: 99%

“…The use of SF 6 radio frequency (RF) discharges under pulsed mode enabled to obtain a highly anisotropic and charge free etching of polycrystalline silicon to be obtained [4]. Pulsed RF discharges have also been used for the deposition of several thin films such as semiconductor germanium [5], cubic boron nitride [6] and amorphous silicon [7]. Direct current (dc) discharges have also been used under pulsed mode for material processing and iron nitriding by N 2 plasmas, in particular [8].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of chemical kinetics and energy transfer in a pulsed microwave H₂/CH₄plasma

Hassouni¹,

Duten²,

Rousseau³

et al. 2001

Plasma Sources Sci. Technol.

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We present a modelling study of pulsed H 2 /CH 4 microwave plasmas obtained under moderate pressure discharge conditions in a tubular quartz reactor. The transport in the reactor was described using a Nusselt model for a radially quasi-homogeneous plasma. The thermal behaviour of the plasma was modelled by distinguishing a single heavy species energy mode and the electron translation mode. The chemistry was described using a 30 species-130 reaction model. The time variations of the electron energy distribution function, the species concentrations and the gas temperature were determined by solving the coupled set of the electron Boltzmann equation, species kinetics equations and a total energy equation. Some of the results obtained from the present model were compared to measurements previously carried out on the plasmas considered. Good agreement was obtained for the time variations of the gas temperature, the relative concentration of the H-atom and the intensities of the H α and the argon 750 nm emission lines. The effect of the duty cycle on the time-averaged composition and temperatures of the discharge was also studied. Results showed that moderate pressure H 2 /CH 4 pulsed discharges obtained at duty cycles of less than 20% show different behaviour than those obtained at higher duty cycles. In particular, while the plasma reaches the permanent periodic regime in less than 2 pulse-periods, i.e. 60 ms, for duty cycle values of less than 20%, long-time-scale density variations of hydrocarbon species, ions and electrons are obtained when this parameter is greater than 20%. The model was also used to determine if the use of a pulsed regime may bring some improvements in plasma-assisted diamond deposition processes. For this purpose we analysed the variation with duty cycle of the time-averaged populations of the H-atom and CH 3 that represent the key species for diamond deposition. Results showed that pulsed discharges with small duty cycle, of typically less than 20%, lead to a substantial enhancement of the time-averaged dissociation yield. On the other hand, the CH 3 concentration exhibits a strong decrease with the duty cycle. The methyl concentration in the investigated pulsed discharge is generally smaller than in continuous wave discharges obtained in the same reactor. These results indicate that short-pulse discharges would favour the formation of films with higher Raman quality, while long duty cycle pulsed discharges would enable deposition at higher growth rates.

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Section: Plasma Simulation Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of chemical kinetics and energy transfer in a pulsed microwave H₂/CH₄plasma

Hassouni¹,

Duten²,

Rousseau³

et al. 2001

Plasma Sources Sci. Technol.

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“…For this simulation, the injected RF energy called is assumed to be deposited "instantaneously." In the experiment [7], energy is deposited for a time duration of about 20 s. is related to total energy stored in the RF capacitor by an efficiency factor (12) where and are capacitance and voltage, respectively, for the RF capacitor.…”

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confidence: 99%

Explosion model applied to an intense pulsed plasma source for thin film deposition

Pedrow

Goyal²,

Mabalingham³

et al. 1997

IEEE Trans. Plasma Sci.

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A pulsed plasma source for deposition of thin polymer films was modeled numerically with the one-dimensional (1-D) time dependent fluid transport equations describing an explosion for an ideal gas. Initial number density, explosion temperature, and velocity were made consistent with values in an experimental reactor. These quantities as well as pressure and fluence were modeled for a distance of 2 m and for a time duration of 93 s. The trajectory for maximum pressure calculated from the model was observed to be consistent with the experimentally measured trajectory of maximum emitted light from an acetylene plasma. Measured axial profiles of areal density for the deposited polymer films were compared with modeled fluence.

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Plasma polymerization using pulsed microwave power

Hwu¹,

Zurawsky²

1992

J. Polym. Sci. A Polym. Chem.

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SYNOPSISPulsed microwave power was used to polymerize a variety of monomers containing different functional groups. We examined the effects of pulse frequency and duty cycle on the deposition rates and the composition of the polymers. For monomers that do not contain oxygen we find that there is an increase in deposition rate with increasing pulse frequency and that the pulsed deposition rate is always less than the continuous power deposition rate. For monomers that contain oxygen, or for co-depositions of hydrocarbon monomers with O2 or CO, we find that there is a decrease in deposition rate with increasing frequency, however the deposition rate using pulsed power is greater than the rate using continuous power. This result is shown to be related to the amount of etching that takes place during the deposition process. Infrared studies reveal that pulsed power can alter the composition of plasma polymers of some oxygen-containing monomers. The presence or absence of vinyl unsaturation, nitrile groups, or a cyclic structure have no effect on the polymerization process.

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Low-temperature pulsed plasma deposition. II. The production of novel amorphous compounds of germanium in thin film

Abstract: Articles you may be interested inLow-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metalinduced crystallization Appl. Phys. Lett.

Cited by 7 publications

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Investigation of chemical kinetics and energy transfer in a pulsed microwave H₂/CH₄plasma

Investigation of chemical kinetics and energy transfer in a pulsed microwave H₂/CH₄plasma

Explosion model applied to an intense pulsed plasma source for thin film deposition

Plasma polymerization using pulsed microwave power

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Low-temperature pulsed plasma deposition. II. The production of novel amorphous compounds of germanium in thin film

Abstract: Articles you may be interested inLow-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metalinduced crystallization Appl. Phys. Lett.

Cited by 7 publications

References 0 publications

Investigation of chemical kinetics and energy transfer in a pulsed microwave H2/CH4plasma

Investigation of chemical kinetics and energy transfer in a pulsed microwave H2/CH4plasma

Explosion model applied to an intense pulsed plasma source for thin film deposition

Plasma polymerization using pulsed microwave power

Contact Info

Product

Resources

About

Investigation of chemical kinetics and energy transfer in a pulsed microwave H₂/CH₄plasma

Investigation of chemical kinetics and energy transfer in a pulsed microwave H₂/CH₄plasma