Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Mohammadi, V.

doi:10.5772/63344

Cited by 2 publications

(1 citation statement)

References 23 publications

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“…The idea of the delta-doped p + layer playing any significant role in the junction formation was completely abandoned when it was demonstrated that similar excellent electrical properties could be achieved by boron CVD on n-type crystalline silicon substrates at temperatures as low as 400 • C, at which no doping of boron in silicon is expected [7].…”

Section: Introduction: Initiation and History Of Boron-silicon Junctions And Importance Of Si-based Junctions/diodes In Microelectronicsmentioning

confidence: 99%

Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview

Sberna

Fang

et al. 2021

Crystals

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The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by the chemical vapor deposition of amorphous boron on n-type crystalline silicon was a shallow p-n junction, although experimental results could not provide evidence for such a conclusion. Only recently, quantum-mechanics based modelling revealed the unique nature and the formation mechanism of this new junction. Here, we review the initiation and the history of understanding the a-B/c-Si interface (henceforth called the “boron-silicon junction”), as well as its importance for the microelectronics industry, followed by the scientific perception of the new junctions. Future developments and possible research directions are also discussed.

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Section: Introduction: Initiation and History Of Boron-silicon Junctions And Importance Of Si-based Junctions/diodes In Microelectronicsmentioning

confidence: 99%

Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview

Sberna

Fang

et al. 2021

Crystals

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A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

Mohammadi

Nihtianov

Fang

2017

Sci Rep

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The interest in nanostructures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low temperature where no doping of silicon is expected. The presented experimental results and simulations of the ab initio quantum mechanics molecular dynamics prove that the structure of this new type of junction differs from all other known rectifying junctions at this time. An analysis of the junction formation has led to the conclusion that the chemical interaction between the surface atoms of crystalline silicon and the first atomic layer of the as-deposited amorphous boron is the dominant factor leading to the formation of a depletion zone in the crystalline silicon which originates from the surface. The simulation results show a very strong electric field across the c-Si/a-B interface systems where the charge transfer occurs mainly from the interface Si atoms to the neighboring B atoms. This electric field appears to be responsible for the creation of a depletion zone in the n-silicon resulting in a rectifying junction-formation between the n-silicon and the atomically thin boron layer.

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Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Cited by 2 publications

References 23 publications

Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview

Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview

A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

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