2004
DOI: 10.1016/j.tsf.2004.02.093
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Low-temperature reactively sputtered iron oxide for thin film devices

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Cited by 129 publications
(82 citation statements)
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“…Again, the peak at 537 nm corresponds to finger print region of the band edge of hematite. This experiment further confirms the formation of pure aFe 2 O 3 (Zhu et al 2012a, b).The optical band gap E g can be experimentally obtained from absorption coefficient measurements using Tauc's formula (Miller et al 2004):…”
Section: Uv-vis Diffuse Reflectance Spectrasupporting
confidence: 81%
“…Again, the peak at 537 nm corresponds to finger print region of the band edge of hematite. This experiment further confirms the formation of pure aFe 2 O 3 (Zhu et al 2012a, b).The optical band gap E g can be experimentally obtained from absorption coefficient measurements using Tauc's formula (Miller et al 2004):…”
Section: Uv-vis Diffuse Reflectance Spectrasupporting
confidence: 81%
“…Among them, Fe 2 O 3 (Eg w 2.2 eV) is a promising material for PEC application due to its higher chemical stability, being nontoxic, and a better anti-photo-corrosion ability in PEC hydrogen production system [9]. There are several methods to prepare Fe 2 O 3 semiconductors, e.g., reactive sputtering [10], sol-gel method [11], electro-deposition [12,13], chemical vapor deposition and spray pyrolysis method [14]. Although the maximum photo-conversion efficiency of Fe 2 O 3 semiconductor approaches 12.9%, Fe 2 O 3 also exhibits a few undesirable properties, such as relatively low sunlight absorption efficiency, high recombination rate, short carrier diffusion length, and low surface reactive rate.…”
Section: Introductionmentioning
confidence: 99%
“…Iron oxide thin films are indeed excellent candidates for the production of catalysts, sensors, non-linear optical and magnetic devices [1]. 57 Fe Mössbauer spectroscopy (MS) offers several advantages for studies of iron-containing compounds.…”
Section: Introductionmentioning
confidence: 99%