Low temperature resistivity of valence fluctuation compound SmB6

Baťko, I.; Farkašovský, Pavol; Flachbart, К.; Konovalova, E.S.; Paderno, Yu. B.

doi:10.1016/0038-1098(93)90234-e

Cited by 22 publications

(30 citation statements)

References 13 publications

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“…Upon cooling a dip typical of VFSs is formed in the vicinity of the Fermi energy, E F , and data strongly resemble observations of other authors [4]. In a qualitative agreement with studies of transport and thermal properties [2], the DOS at E F remains finite down to 4.2 K. The shape of the dip strongly resembles a narrow pseudogap. A qualitatively similar behavior is observed for YbB 12 , as shown in Fig.…”

Section: Methodssupporting

confidence: 88%

“…While their electronic properties at high temperatures resemble those of a dirty metal, at low temperatures both systems behave as narrow-gap semiconductors [1]. However, many of their low temperature characteristics, such as the temperature dependence of electrical resistivity, exhibit unusual behavior that cannot be satisfactorily explained using a concept of classic semiconductors [1,2]. Thus several fundamental aspects, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Thus several fundamental aspects, e.g. the origin of their forbidden gaps, or the origin of the metallic--like conductivity of SmB 6 at lowest temperatures [2], are still not understood.…”

Section: Introductionmentioning

confidence: 99%

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Tunneling Spectroscopy Studies of SmB₆and YbB₁2

et al. 2008

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Reported electron tunneling studies of SmB 6 and YbB 12 in the temperature region with a strongly temperature activated transport reveal a qualitative change of tunneling regime upon cooling. While the differential conductance curves above 50 K resemble the tunneling between two different metals, the spectra observed at 4.2 K are typical of the tunneling between a metal and a (narrow-gap) valence fluctuating semiconductor.

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Section: Methodssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

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Tunneling Spectroscopy Studies of SmB₆and YbB₁2

et al. 2008

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“…-+ d Samarium hexaboride is a typical representative of intermediate valence semiconductors and is considered as an example of a Kondo insulator [1][2][3][4]. Almost three decades after the first investigations on this material [5], a large number of detailed and comprehensive studies of SmB 6 have been performed. However, many fundamental properties of SmB 6 such as the electrical conductivity and the behavior of magnetic susceptibility at lower temperatures are not fully understood.…”

mentioning

confidence: 99%

“…However, many fundamental properties of SmB 6 such as the electrical conductivity and the behavior of magnetic susceptibility at lower temperatures are not fully understood. The resistivity p(T) is slightly temperature dependent down to 50 K below which it starts to increase exponentially [1,5] due to the opening of a hybridization gap in the density of states. Between 15 K and 5 K it can be described by an exponential increase p(T) α exp(-Δ 0 /kΒ Τ), with an activation energy Δ 0 of a few meV [1,[5][6][7][8][9].…”

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confidence: 99%

Low Temperature Transport and Magnetic Properties of SmB₆

et al. 2000

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We present results of transport and magnetic properties of three single--crystalline samples of the intermediate valence small-gap semiconductor SmB6 at low temperatures. The received resistivity dependences of the samples below 0.5 K exhibit an activated behavior with an energy gap of a few mK. The temperature dependences of the magnetic susceptibility show an increase below 15 K which can be accounted for by impurities, by bare Sm3+ ions or by a small amount of in-gap magnetic 4f 5 5d1 states.PACS numbers: 75.20.Ηr, 71.28. -+ d Samarium hexaboride is a typical representative of intermediate valence semiconductors and is considered as an example of a Kondo insulator [1][2][3][4]. Almost three decades after the first investigations on this material [5], a large number of detailed and comprehensive studies of SmB 6 have been performed. However, many fundamental properties of SmB 6 such as the electrical conductivity and the behavior of magnetic susceptibility at lower temperatures are not fully understood. The resistivity p(T) is slightly temperature dependent down to 50 K below which it starts to increase exponentially [1,5] due to the opening of a hybridization gap in the density of states. Between 15 K and 5 K it can be described by an exponential increase p(T) α exp(-Δ 0 /kΒ Τ), with an activation energy Δ 0 of a few meV [1,[5][6][7][8][9]. However, there exists disagreement about the temperature dependence of p below about 4 K and about the origin of the observed residual conductivity. The residual conductivity has been interpreted in terms of the minimum conductivity [7], as a Wigner lattice formation [9], or attributed to surface states [10]. Thermally activated behavior and hopping transport have been proposed to account for the temperature dependence [5,9] in this temperature range. The magnetic susceptibility reveals the characteristic features of an intermediate valence compound: a Curie-Weiss like susceptibility at temperatures above 100 K indicating a local-moment behavior, and a temperature independent susceptibility at low temperatures due to a nonmagnetic 4f 5 5d1 configuration between localized (419)

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