Low-temperature semiconductor mechanical sensors

Maryamova, I. I.; Druzhinin, A. A.; Lavitska, E.; Gortynska, I; Yatzuk, Y

doi:10.1016/s0924-4247(00)00376-9

Cited by 40 publications

(13 citation statements)

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“…Ge-, Si-and Ge-Si-based strain gauges have been widely utilized and their properties have been investigated [3][4][5]. However, these semiconductor sensors exhibit a high resistivity and a high strain-sensitivity coefficient as a function of temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Semiconductor resistance strain gauges, which convert a mechanical stimulus into an electrical signal, are widely used in measuring stresses and strains in many components such as structural elements, machine parts and mechanical test samples [1,2]. Ge-, Si-and Ge-Si-based strain gauges have been widely utilized and their properties have been investigated [3][4][5]. However, these semiconductor sensors exhibit a high resistivity and a high strain-sensitivity coefficient as a function of temperature.…”

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confidence: 99%

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Strain gauges of GaSbFeGa1.3 eutectic composites

et al. 2004

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A needle-shaped metallic FeGa 1.3 phase oriented in a specific direction and uniformly distributed within a GaSb matrix was grown by a vertical Bridgman method. Strain-gauge characteristics, such as strain-sensitivity coefficient (S), temperature coefficient of strain sensitivity (TCS) and temperature coefficient of resistance, of GaSb and GaSb-FeGa 1.3 eutectic alloy have been investigated in the range of 200 to 400 K under deformation up to strains of 1.3 × 10 −3 . The value of S of the GaSb-FeGa 1.3 composition is measured to be 40 ± 5 and its TCS is about 0.2 % deg −1 when the current is perpendicular to the needles and the needles are parallel to the plane of the gauge substrate. The strain-sensitivity characteristics are linear and hysteresis free in the investigated temperature range in the aforementioned direction. It was found that GaSb-FeGa 1.3 -based strain gauges possess better deformation characteristics than GaSb-based gauges. Semiconductor resistance strain gauges, which convert a mechanical stimulus into an electrical signal, are widely used in measuring stresses and strains in many components such as structural elements, machine parts and mechanical test samples [1,2]. Ge-, Si-and Ge-Si-based strain gauges have been widely utilized and their properties have been investigated [3][4][5]. However, these semiconductor sensors exhibit a high resistivity and a high strain-sensitivity coefficient as a function of temperature. Also, there is a nonlinear behavior with strain. These factors cause a number of difficulties in modeling and designing strain-gauge-type devices. Therefore, the investigation of potential semiconductor materials to be used as mechanical sensors with thermostable parameters is essential.GaSb is a candidate semiconductor for the exploration of its strain effect due to its interesting band structure [6,7]. Although the sensors based on GaSb show a large strainsensitivity coefficient, they exhibit a significant temperature dependence of resistivity and strain-sensitivity coefficient. Interestingly, the incorporation of FeGa 1.3 metallic phase in u Fax: +994-1239-59-61, E-mail: rashad@physics.ab.az the GaSb matrix causes distinctive features of the straingauge characteristics in this material. Such heterogeneous structures possess the system of a semiconductor-metal type of GaSb-FeGa alloy. In our previous study [8], microstructure, electrical and thermal properties of GaSb-FeGa 1.3 eutectic composition were revealed and features of electron and phonon processes were studied. In these systems, it is considered that the electrical resistivity of the semiconductormetal boundaries is affected by the amount of the deformation on the alloy. Also, by forming eutectic alloys, the interactions between atoms are weakened and the bond energy of valance electrons that is related to the essential redistribution of charge electron densities of the nearby atoms of all components on these boundaries diminishes. This may have some considerable effect on the strain-gauge characteristics of th...

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Section: Introductionmentioning

confidence: 99%

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Strain gauges of GaSbFeGa1.3 eutectic composites

et al. 2004

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“…4a) To find out the activation energy of the impurity conductance in Ge-Si whiskers in the range of cryogenic temperatures we used temperature dependences of conductance (Figs 1 , 2). At cryogenic temperatures (1<77 K) the conductance of doped semiconductors can be approximated as a sum of three conductances with corresponding activation energies s1 =cTiexp() (1) where El -i5 the ground state activation energy of the impurity (acceptor, in our case) and depends on the impurity species, and 62 and c represent the activation energies for the hopping conductance, i.e. by phonon-assisted tunneling involving the ionized and the neutral acceptor centers; activation energy E3 corresponds to the hopping conductance of independent and correlated charge transfers in system of serially connected pairs of the impurity-centers (so-called 'pair hopping' conductance), 82 -the hopping conductance due to the carries in the band composed of doubly occupied impurity states (Atband in p-type semiconductors doped by the acceptor-impurities).…”

Section: Resultsmentioning

confidence: 99%

<title>Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures</title>

et al. 2003

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The present paper deals with studies of deformation influence on GeSi1 (x = 0.01÷0.03) whiskers conduction in the temperature range 4.2÷300 K. The whiskers were grown by chemical vapour deposition method in a sealed bromide system with use of Au and B dopants. The whiskers with resistivity p =0.005÷0.025 cm were investigated. The values of resistivity corresponded to the impurity concentrations in the vicinity of the metal-insulator transition. The strain was imposed by the whisker mounting on specially selected substrates (quartz, copper, aluminium) with thermal expansion coefficient different from that in Si-Ge material. The 'giant' piezoresistance was found in the specimens at cryogenic temperatures. Estimated longitudinal gauge factor G<111> Ap/(p0c) is equal to 10.000÷30.000 at 4.2 K in the whiskers with resistivity p = 0.012÷0.018 acm. From o=f(1Tf) curves activation energies for the hopping conductance in the whiskers have been calculated. Possible reasons of the obtained phenomena are discussed.

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“…НК Si були обрані для до-сліджень тому, що ці кристали використову-ються як чутливі елементи п'єзорезистивних сенсорів механічних величин, зокрема, сенсо-рів деформації [12,13]. Для досліджень було відібрано чотири групи мікрокристалів крем-нію з різною концентрацією бору, а саме: 1) сильно леговані НК Si p-типу з ρ 300К =0,006 Ом×см з металевим типом провід-ності;…”

Section: об'єкт дослідження і методика експериментуunclassified

Piezoresitive Characteristics of Silicon Microcrystals at Cryogenic Temperatures

Druzhinin¹,

Maryamova²,

Kutrakov³

et al. 2014

SEMST

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АнотаціяДля створення сенсорів деформації, працездатних при кріогенних температурах, дослі-джено тензометричні характеристики легованих бором ниткоподібних кристалів (НК) Si р-типу, закріплених на пружних елементах, виготовлених зі сталі, при фіксованих темпе-ратурах 4,2, 77 і 300 К. Показано, що термічна деформація, яка виникає внаслідок різниці коефіцієнтів термічного розширення (КТР) кремнію і матеріалу пружного елемента (сталі) при закріпленні кристала на балці, дуже сильно впливає на тензометричні характеристики кристалів кремнію, особливо при кріогенних температурах. Це необхідно враховувати при розробці сенсорів на основі мікрокристалів Si для вимірювання деформацій в конс-трукціях, виготовлених з різних матеріалів. Показано, що НК Si p-типу з ρ 300К =0,010 Ом×см з концентрацією бору поблизу переходу метал-діелектрик з металевого боку з коефіцієн-том тензочутливості К 4,2К =-1020 при деформації стиску найбільш придатні для створення сенсорів деформації для кріогенних температур, зокрема для 4,2 К. Для створення сенсорів деформації для температури рідкого азоту найбільш придатні НК p-Si з ρ 300К =0,025 Ом×см з коефіцієнтом тензочутливості К 77К =263.Ключові слова: кремній, ниткоподібні кристали, кріогенні температури, сенсори де-формації, п'єзорезистивний.

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Low-temperature semiconductor mechanical sensors

Cited by 40 publications

References 2 publications

Strain gauges of GaSbFeGa1.3 eutectic composites

Strain gauges of GaSbFeGa1.3 eutectic composites

<title>Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures</title>

Piezoresitive Characteristics of Silicon Microcrystals at Cryogenic Temperatures

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