Low-Temperature Sintering of Bi(Ni0.5Ti0.5)O3-BiFeO3-Pb(Zr0.5Ti0.5)O3 Ceramics and Their Performance

Abstract

A low-temperature sintering strategy was realized for preparing 0.21Bi(Ni0.5Ti0.5)O3-0.05BiFeO3-0.74Pb(Zr0.5Ti0.5)O3 (0.21BNT-0.05BF-0.74PZT) ceramics by conventional ceramic processing by adding low melting point BiFeO3 and additional sintering aid LiBO2. Pure perovskite 0.21BNT-0.05BF-0.74PZT ceramics are prepared at relatively low sintering temperatures, and their structure presents tetragonal distortion that is affected slightly by the sintering temperature. The 1030 °C sintered samples have high densification accompanied by relatively large grains. All ceramics have excellent dielectric performance with a relatively high temperature of dielectric constant maximum, and present an apparent relaxation characteristic. A narrow sintering temperature range exists in the 0.21BNT-0.05BF-0.74PZT system, and the 1030 °C sintered 0.21BNT-0.05BF-0.74PZT ceramics exhibit overall excellent electrical performance. The high-temperature conductivity can be attributed to the oxygen vacancies’ conduction produced by the evaporation of Pb and Bi during sintering revealed by energy dispersive X-ray measurement.

Effect of A- or B-Site Sc Doping on Sintering Temperature, Crystal Structure, Microstructure, and Properties of BaZrxTi1−xO3 Ceramics

“…A suitable annealing temperature provides sufficient energy for grain boundary movement and grain merging. The number of grain boundaries per unit volume is small, which is conducive to increasing the dielectric constant and improving the dielectric properties [19][20][21]. At the same time, it can be clearly seen from the SEM photos, as shown in Figure S2a, that when the sintering temperature is 1100 • C, the grain size of BZT ceramics is small and there are more defects at the grain boundary, so it is not conducive to the improvement of the dielectric properties.…”