Low‐Temperature, Solution‐Processed and Alkali Metal Doped ZnO for High‐Performance Thin‐Film Transistors

Park, Si Yun; Kim, Beom Joon; Kim, Kyongjun; Kang, Moon Sung; Lim, Keon Hee; Lee, Tae Il; Myoung, Jae Min; Baik, Hong Koo; Cho, Jeong Ho; Kim, Youn Sang

doi:10.1002/adma.201103173

Cited by 206 publications

(121 citation statements)

References 26 publications

Supporting

Mentioning

116

Contrasting

Order By: Relevance

“…Sheet resistance is lower, and figure-of-merit higher, for mixed solvent cast precursor even compared to work using higher capacitance ionic liquid (rather than aqueous) gate medium [21], or casting dissolved (rather than precursor-route) ZnO [23].…”

Section: This Workmentioning

confidence: 99%

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Althagafi

Algarni

Naim

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. This is an Accepted Manuscript, which has been through the Royal Society of Chemistry peer review process and has been accepted for publication.Accepted Manuscripts are published online shortly after acceptance, before technical editing, formatting and proof reading. Using this free service, authors can make their results available to the community, in citable form, before we publish the edited article. We will replace this Accepted Manuscript with the edited and formatted Advance Article as soon as it is available. AbstractWe significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, Zinc Acetate (ZnAc), dissolves more readily in a 1:1 mix of ethanol (EtOH) and acetone than in either pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from mixed solvent cast ZnAc precursor compared to EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. Sheet resistance at V G = V D = 1V is 30 kΩ/!, lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.

show abstract

Section: This Workmentioning

confidence: 99%

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Althagafi

Algarni

Naim

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…[24][25][26][27][28][29][30] Moreover, for instance, Cs-doped TiO 2 , Csdoped ZnO, Al-doped ZnO, Al-doped MoO 3 and metal oxides incorporated with other functional elements have been developed to realize efficient carrier transport with other features of high conductivity, the carrier blocking effect and optical enhancement. [31][32][33][34][35][36][37][38] These doped metal oxide interfacial layers require high-temperature annealing or co-evaporation methods, and the film formation is usually limited to either normal or inverted device architecture only.…”

Section: Introductionmentioning

confidence: 99%

MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

et al. 2015

View full text Add to dashboard Cite

To achieve fabrication and cost competitiveness in organic optoelectronic devices that include organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), it is desirable to have one type of material that can simultaneously function as both the electron and hole transport layers (ETLs and HTLs) of the organic devices in all device architectures (i.e., normal and inverted architectures). We address this issue by proposing and demonstrating Cs-intercalated metal oxides (with various Cs mole ratios) as both the ETL and HTL of an organic optoelectronic device with normal and inverted device architectures. Our results demonstrate that the new approach works well for widely used transition metal oxides of molybdenum oxide (MoO x ) and vanadium oxide (V 2 O x ). Moreover, the Cs-intercalated metaloxide-based ETL and HTL can be easily formed under the conditions of a room temperature, water-free and solution-based process. These conditions favor practical applications of OSCs and OLEDs. Notably, with the analyses of the Kelvin Probe System, our approach of Cs-intercalated metal oxides with a wide mole ratio range of transition metals (Mo or V)/Cs from 1 : 0 to 1 : 0.75 can offer significant and continuous work function tuning as large as 1.31 eV for functioning as both an ETL and HTL. Consequently, our method of intercalated metal oxides can contribute to the emerging large-scale and low-cost organic optoelectronic devices.

show abstract

“…In addition, the starting Zn solutions were prepared by directly dissolving Zn(OH) 2 in aqueous ammonia solutions, to produce a so-called 'impurity-free precursor'. The use of zinc hydroxide allowed for low-temperature ZnO formation, indicating rapid, low-energy kinetics of metal-amine dissociation and simple dehydration and condensation reactions to form ZnO films [61,62]. The undoped ZnO (140°C under microwave-assisted annealing) and Li doped ZnO TFTs (300°C annealing) exhibited remarkable performance: μ fe~1 .7 cm 2 /V · s and 11.45 cm 2 /V · s for undoped and Lidoped devices, respectively.…”

Section: Solution Processed Oxide Semiconductorsmentioning

confidence: 99%

“…The third process is a simple and novel 'aqueous route' for fabricating oxide TFTs at annealing temperatures below 200°C, suggested by several researchers [60][61][62]. The suggested aqueous route provides low-temperature oxideformation and good stability by restricting the hydrolysis and condensation reactions within a solution state.…”

Section: Solution Processed Oxide Semiconductorsmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

View full text Add to dashboard Cite

The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

show abstract

Low‐Temperature, Solution‐Processed and Alkali Metal Doped ZnO for High‐Performance Thin‐Film Transistors

Cited by 206 publications

References 26 publications

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

Overview of electroceramic materials for oxide semiconductor thin film transistors

Contact Info

Product

Resources

About