Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

Zhang, Qian; Ruan, Cheng; Gong, Hongyu; Wang, Sumei

doi:10.1016/j.tsf.2021.138594

Cited by 10 publications

(6 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the printed IGZO bilayer films, In 2 O 3 in the IGZO films can provide a high density of carrier and high carrier mobility. While the Ga 2 O 3 in the IGZO films will inhibit the carrier density and reduce the carrier mobility . With increasing Ga and Zn contents of liquid Ga–In–Zn alloys, the Ga 2 O 3 concentrations in the printed IGZO films increase, while the In 2 O 3 concentrations decrease (Figure c).…”

Section: Resultsmentioning

confidence: 98%

“…While the Ga 2 O 3 in the IGZO films will inhibit the carrier density and reduce the carrier mobility. 39 With increasing Ga and Zn contents of liquid Ga−In−Zn alloys, the Ga 2 O 3 concentrations in the printed IGZO films increase, while the In 2 O 3 concentrations decrease (Figure 4c). As a consequence, the carrier density, carrier mobility and conductivity of printed IGZO channel layers decrease gradually with rising Ga and Zn concentrations in liquid Ga−In−Zn alloys.…”

Section: Resultsmentioning

confidence: 99%

“…Up to now, vacuum deposition and liquid solution deposition have been widely used to grow IGZO films. − Though the high crystallization and uniformity IGZO films can be harvested by using the vacuum deposition process, the high vacuum atmosphere, experimental equipment, and uniform IGZO targets are the main challenges of obtaining low-cost IGZO films. Using a liquid solution deposition process to produce IGZO films drew much attention in recent years, because of the low cost and large area IGZO films can be easily harvested by using this facile synthesis technology. − Though the method of liquid solution deposition can realize the preparation of IGZO films in an air atmosphere, the unavoidable hole defects on the surface of IGZO films and the high annealing temperature for IGZO films’ crystallization are challenging problems in obtaining high-quality IGZO films at low temperatures. Additionally, it is hard to obtain two-dimensional (2D) or ultrathin IGZO films using the aforementioned process.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Du,

Li,

Wei

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Amorphous InGaZnO (IGZO) films with high visible transmittance and wide bandgaps are good candidates to fabricate thin film transistors' (TFTs) switching for flat-panel displays. The traditional sputtering and liquid solution deposition processes make it difficult to prepare ultrathin IGZO films with large area and low cost. Herein, we report a one-step printing process to successfully obtain centimeter scale, ultrathin, and low cost IGZO films by printing liquid Ga−In−Zn alloys. The printed IGZO films have near 100% transmittance of visible light and bandgaps above 4.17 eV. The printed IGZO films were further used to fabricate TFTs, which show n-type switching and display a good stability under visible light illumination. The fabricated TFTs show an on/off ratio above 10 3 , a maximum field effect mobility of 14.25 cm 2 V −1 s −1 and a minimum subthreshold swing of 0.46 V dec −1 . With the Ga 2 O 3 concentration in printed IGZO films increasing, the on/off ratios of TFTs increase, while the field effect mobility of TFTs decreases. This printing strategy provides a facile route to obtain IGZO nano films, which have great potentiality in fabricating high performance TFT switching for flat-panel displays.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Du,

Li,

Wei

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…However, the hightemperature process is incompatible with most flexible and stretchable substrates, which is an obstacle for flexible electronic application. In the last years, several low-temperature solution approaches, such as deep ultraviolent (DUV) irradiation [30,31], combustion [12] and lightwave (LW) irradiation [32][33][34], have been developed to fabricate metal oxide films and TFTs. However, low-temperature solution-processed oxide TFTs usually reveal relatively poor performance, especially stability, which is a significant obstacle to the applications of TFTs.…”

Section: Introductionmentioning

confidence: 99%

Solution-processed bilayer InGaZnO/In₂O₃ thin film transistors at low temperature by lightwave annealing

Zhang,

Xia,

et al. 2024

Nanotechnology

Self Cite

View full text Add to dashboard Cite

At low temperatures about 230 ℃, bilayer InGaZnO/In2O3 thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In2O3 bilayer TFTs with SiO2 asdielectric layer show high electrical performances, such as a mobility of 8.1 cm2V-1s-1, a threshold voltage (Vth) of 3.8 V, and an on/off ratio higher than 107, which are superior to single-layer InGaZnO TFTs or In2O3 TFTs. Moreover, bilayer InGaZnO/In2O3 TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In2O3 layer. By using high dielectric constant AlOx dielectric, the InGaZnO/In2O3 TFTs exhibit an improved mobility of 51.5 cm2V-1s-1. The excellent electrical performance of the solution-based InGaZnO/In2O3 TFTs shows great application potential for low-cost flexible electronics.

show abstract

“…To increase the film quality, traditional thermal annealing is used to promote the chemical reaction. 27 Recently, physical techniques, such as light-wave annealing, 28 UV/O 3 -assisted thermal annealing 26 and UV-assisted thermal annealing (UVTA) 29 are used to modify AOS films at low temperature. These techniques use energy from electromagnetic waves for thermal annealing.…”

mentioning

confidence: 99%

Low-Temperature Solution-Processed ZnSnO Ozone Gas Sensors Using UV-Assisted Thermal Annealing

Lin¹,

Jiang²,

Huang³

et al. 2022

J. Electrochem. Soc.

View full text Add to dashboard Cite

Ultraviolet-assisted thermal annealing (UVTA) has been widely used to fabricate solution-processed amorphous oxide semiconductor (AOS)-based transistors and photodetectors. However, this method has not been used for AOS-based gas sensors, even though AOS is a good gas sensing material. This study determines the effect of UVTA on the electrical properties of In-free amorphous ZnSnO (ZTO) thin films and their ozone (O3) gas sensing characteristics. UV light from a mercury lamp has sufficient energy to decompose the organic- and hydrogen-based impurities completely, which promotes the formation of metal oxide networks, so the quality of ZTO films is greatly increased by increasing treatment time. A relatively high gas response of 1.42 with a fast response/recovery time (124/78 s) is achieved. This strategy allows the fabrication of ZTO gas sensors at low temperature (150°C) and is applicable to flexible electronics.

show abstract

Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

Cited by 10 publications

References 37 publications

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Solution-processed bilayer InGaZnO/In₂O₃ thin film transistors at low temperature by lightwave annealing

Low-Temperature Solution-Processed ZnSnO Ozone Gas Sensors Using UV-Assisted Thermal Annealing

Contact Info

Product

Resources

About

Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

Cited by 10 publications

References 37 publications

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

Low-Temperature Solution-Processed ZnSnO Ozone Gas Sensors Using UV-Assisted Thermal Annealing

Contact Info

Product

Resources

About

Solution-processed bilayer InGaZnO/In₂O₃ thin film transistors at low temperature by lightwave annealing