2016
DOI: 10.1016/j.nanoen.2016.04.060
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Low-temperature solution-processed Li-doped SnO2 as an effective electron transporting layer for high-performance flexible and wearable perovskite solar cells

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Cited by 454 publications
(289 citation statements)
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“…Park et al have tried to dope SnO 2 by Li element via mixing SnCl 2 ·2H 2 O with bis(trifluoromethane)sulfonimide lithium salt (Li‐TFSI) . They found the Li‐doped SnO 2 enhanced conductivity and induced a downward shift of the conduction band of SnO 2 , which facilitated electrons injection and transfer from perovskite to SnO 2 , finally, they get the efficiency of 18.2%.…”
Section: Modification Of Sno2mentioning
confidence: 99%
“…Park et al have tried to dope SnO 2 by Li element via mixing SnCl 2 ·2H 2 O with bis(trifluoromethane)sulfonimide lithium salt (Li‐TFSI) . They found the Li‐doped SnO 2 enhanced conductivity and induced a downward shift of the conduction band of SnO 2 , which facilitated electrons injection and transfer from perovskite to SnO 2 , finally, they get the efficiency of 18.2%.…”
Section: Modification Of Sno2mentioning
confidence: 99%
“…Finally, 150 nm Ag was thermally evaporated onto the HTM layer in vacuum to act as the cathode. The cell area is 0.09 cm 2 . While moving, the samples were placed in special boxes filled with nitrogen, and the device was stored in cabinet with flowing N2 gas.…”
Section: Fabrication Of Perovskite Solar Cellsmentioning
confidence: 99%
“…Recent progress in perovskite solar cells (PSCs) has attracted great attention due to the rapid improvement of their power conversion efficiency (PCE) from initial 3.8% in 2009 to certified 22.1% in 2016 [1][2][3][4][5][6][7][8][9]. Selective extraction of photo-generated electrons and holes that inhibits charge recombination is necessary for achieving high efficiency in PSCs [10], and the exploration of the effective electron selective layer (ESL) remains a challenging scientific issue.…”
Section: Introductionmentioning
confidence: 99%
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“…Very, recently, low temperature processed and TiCl 4 treatment of TiO x films showed improved devices characteristic in comparison to the untreated one. 42,43 However, the surface modified or treated PSCs devices have suffered from the huge hysteresis in forward and backward scans. Therefore, it is of utmost importance to fabricate a pinhole-free, ETL layer for high efficient devices.…”
mentioning
confidence: 99%