2018
DOI: 10.1016/j.solmat.2018.05.001
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Low temperature, solution-processed perovskite solar cells and modules with an aperture area efficiency of 11%

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Cited by 52 publications
(47 citation statements)
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“…Here, three different scribes, or patterns, are applied on different layers of the device to make the interconnects. With this method, high g-FF can be achieved for architectures that employ metal top contacts, e.g., below 80% [19], around 85% [20] or even more than 90% [21][22][23]. Furthermore, the scribing method is particularly suitable for large area productions because it can be used in either sheet-to-sheet or roll-to-roll processes [16].…”
Section: Introductionmentioning
confidence: 99%
“…Here, three different scribes, or patterns, are applied on different layers of the device to make the interconnects. With this method, high g-FF can be achieved for architectures that employ metal top contacts, e.g., below 80% [19], around 85% [20] or even more than 90% [21][22][23]. Furthermore, the scribing method is particularly suitable for large area productions because it can be used in either sheet-to-sheet or roll-to-roll processes [16].…”
Section: Introductionmentioning
confidence: 99%
“…After impressive power conversion efficiencies (PCEs) of over 23% have been reached on lab‐scale small‐area (<1 cm 2 ) devices, the scalability and stability of PSCs are now among the most important technological challenges. Thin‐film PSCs with the perovskite absorber layer processed on top of an n‐type selective contact, such as zinc, titanium, indium, and tin oxide (ZnO, TiO 2 , InO 3 , and SnO 2 ), are among the most commonly used device architectures and referred to as “regular” or n‐i‐p devices. SnO 2 was realized as a better n‐type selective contact due to energetic match between SnO 2 and perovskite conduction bands and low temperature processing compared with TiO 2 ETL .…”
Section: Introductionmentioning
confidence: 99%
“…Thin‐film PSCs with the perovskite absorber layer processed on top of an n‐type selective contact, such as zinc, titanium, indium, and tin oxide (ZnO, TiO 2 , InO 3 , and SnO 2 ), are among the most commonly used device architectures and referred to as “regular” or n‐i‐p devices. SnO 2 was realized as a better n‐type selective contact due to energetic match between SnO 2 and perovskite conduction bands and low temperature processing compared with TiO 2 ETL . However, n‐i‐p devices often exhibit substantial discrepancies between current–voltage measurements—hysteresis—in different scan directions .…”
Section: Introductionmentioning
confidence: 99%
“…However, the performance of PSCs utilizing "lowtemperature" SnO2 deposited from SnCl2.2H2O precursor solution dissolved in hydrous ethanol (0.1M concentration) is not always at the same level as that obtained from "hightemperature alternatives", and show less reproducibility and significant hysteresis due to the presence of surface traps at the interface of SnO2 and perovskite layer. Several treatments to the SnO2 layer including UV light exposure [11], water vapor treatments [22], together with plasma-enhanced atomic-layer deposition (PEALD) [23] have been carried out in order to enhance the performance of SnO2 based PSCs. Another route consists in developing composite ETLs.…”
mentioning
confidence: 99%