Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

Chun, Yong Jin; Sugaya, Takeyoshi; Okada, Yoshitaka; Kawabe, Mitsuo

doi:10.1143/jjap.32.l287

Cited by 51 publications

(23 citation statements)

References 11 publications

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“…1) Most prominent is the low temperature surface cleaning by reactive removal of oxygen and carbon 2) which has been also confirmed on InP 3) and Si 4) substrates. When extended to the continuous removal of impurities during growth, high-quality epitaxial layers have been obtained by atomic hydrogen assisted MBE at low temperature.…”

Section: Introductionmentioning

confidence: 69%

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Nötzel

Ploog

2000

Jpn. J. Appl. Phys.

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We present our recent experiments on the effect of atomic hydrogen on the growth on planar and patterned high-index GaAs substrates by molecular beam epitaxy and its application to novel quantum wire and quantum dot arrays. The promotion of step bunching on GaAs (331)A substrates by atomic hydrogen to well-ordered multiatomic step arrays is utilized for the fabrication of modulation-doped conductive quantum wires with strong anisotropy of the electron conductivity. Atomic hydrogen induced step bunching on GaAs (311)A substrates combined with lithographic patterning of the substrate prior to growth produces uniform arrays of quantum dots.KEYWORDS: III-V semiconductors molecular beam epitaxy step bunching atomic hydrogen quantum wires quantum dots * Present address:

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Section: Introductionmentioning

confidence: 69%

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Nötzel

Ploog

2000

Jpn. J. Appl. Phys.

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“…One sample was prepared with atomic hydrogen cleaning (AHC), which has previously been shown to be effective for III-V semiconductors. [22][23][24][25] Molecular hydrogen was passed through a TC-50 thermal gas cracker (Oxford Applied Research, UK), with cracking efficiency of ∼50% to produce atomic hydrogen (H), which is incident on the sample. The sample was heated to 350 • C during AHC, with a total H dose of 16 kL.…”

Section: A Sample Preparationmentioning

confidence: 99%

Surface structure of GaP(110): Ion scattering and density functional theory study

et al. 2012

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The structure of the GaP(110) surface has been investigated using coaxial impact collision ion scattering spectroscopy (CAICISS) and density functional theory (DFT). CAICISS simulations based on structural parameter values of the well known buckled dimer model obtained in quantitative low energy electron diffraction studies in the 1980s were found to fit well with experimental data measured in the [110] azimuth, but offered a relatively poor fit in all other incident geometries. A new surface structure derived from DFT calculations, involving small changes to bond angles and interlayer spacings, was optimized during the analysis of CAICISS data, until good fits of the data were obtained for all three azimuths ([110], [001], and [111]). The key feature of the new structure found to be required for this improved agreement with experiment is the inclusion of relaxations both parallel and perpendicular to the surface between the second and third layers.

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“…Several cleaning procedures are available for InP wafers, for example, chemical cleaning, 1,2 thermal cleaning, 3-5 and atomic hydrogen irradiation. 6,7 Among them, the chemical cleaning is the simplest and easiest to control.Unlike Si which forms a very excellent interface with its oxide, SiO 2 , the native oxide of InP is detrimental due to the formation of surface traps and interface states at the InP/InP native oxide interface. Therefore, the removal of the native oxide from the InP surface is critical to various device fabrications using this material.…”

mentioning

confidence: 99%

Chemically Treated InP(100) Surfaces in Aqueous HCl Solutions

Kikuchi

Matsui

Adachi

2000

J. Electrochem. Soc.

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Cleaning and passivation of semiconductor surfaces are of great importance in crystal growth and device fabrication. Several cleaning procedures are available for InP wafers, for example, chemical cleaning, 1,2 thermal cleaning, 3-5 and atomic hydrogen irradiation. 6,7 Among them, the chemical cleaning is the simplest and easiest to control.Unlike Si which forms a very excellent interface with its oxide, SiO 2 , the native oxide of InP is detrimental due to the formation of surface traps and interface states at the InP/InP native oxide interface. Therefore, the removal of the native oxide from the InP surface is critical to various device fabrications using this material. 8 Evolution of the surface topography of semiconductors is also of practical importance, since they usually represent the starting material of most device processing. It is known 9 that the physical and physicochemical properties of a semiconductor are closely related to its surface roughness. For example, the presence of topological imperfections could create surface or interface scattering, and these affect the carrier transport properties. It is also clear that the downsizing of semiconductor devices requires a high-resolution imaging of the semiconductor surface.In this paper, we report the chemical treatment effects of InP(100) surfaces in aqueous HCl solutions studied using X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), (ex situ) atomic force microscopy (AFM), and contact-angle measurement techniques. XPS is used to give an overview of the core-level XPS lines observed for the HCl-cleaned InP(100) surfaces. SE is a highly surface-sensitive technique which enables detection of not only submonolayer coverage of a surface by adsorbed species 10,11 but also the surface roughness of its size comparable or smaller than the wavelength of light. 12 We perform an effective medium approximation (EMA) 13 and a linear regression analysis (LRA) 14 to evaluate the surface microroughness of the HCl-cleaned InP surfaces. AFM is also used to independently assess surface morphology changes due to the HCl etching. ExperimentalThe InP(100) wafers used were Sn-doped, n-type with carrier concentrations of 1-3 ϫ 10 18 cm Ϫ3 . They were mirror-finished and supplied by Nippon Kogyo Co., Ltd.The as-received InP(100) wafers were first degreased with organic solvents in an ultrasonic bath and then rinsed with deionized (DI) water. No further cleaning of the sample surface was performed. Then the sample surfaces to be studied were covered with a ϳ4 nm thick native oxide film. This oxide thickness was determined by SE.The concentrations of the aqueous HCl solutions studied were x ϭ 0.009-36 wt %. A large quantity of the solution was prepared to prevent the etching solution composition from varying during the experiment. Etching experiments were performed at 20ЊC in room light without stirring. After chemical treatment, the samples were rinsed in DI water.The XPS measurements were performed with an ULVAC-PHI model 5600 spectrometer equipped wit...

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Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

Cited by 51 publications

References 11 publications

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Surface structure of GaP(110): Ion scattering and density functional theory study

Chemically Treated InP(100) Surfaces in Aqueous HCl Solutions

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