Low Temperature Synthesis and Growth Model of Thin Mo2C Crystals on Indium

Abstract

CVD method is a promising technique to produce Mo2C crystals with large-area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 C) prompted a research for alternatives. In this study, we report the synthesis of large-area thin Mo2C crystals on liquid In surface at 1000 C for the first time. SEM, EDS, Raman Spectroscopy, XPS and XRD studies show that the hexagonal shaped Mo2C crystals, that are orthorhombic, grow along the [100] direction together with amorphous carbon thin film on In. The growth mechanism is examined and discussed in detail and a model is proposed. The AFM studies agree well with the proposed model showing that the vertical thicknesses of the Mo2C crystals decrease inversely with the thickness of the In for the given reaction time.