Low-temperature synthesis and growth model of thin Mo2C crystals on indium

Abstract

Chemical vapor deposition is a promising technique to produce Mo2C crystals with large area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 °C) prompted research groups to search for alternatives. In this study, we report the synthesis of large-area thin Mo2C crystals at lower temperatures using liquid In, which is also advantageous with respect to the transfer process due to its facile etching. SEM, EDS, Raman spectroscopy, XPS, and XRD studies show that hexagonal Mo2C crystals, which are orthorhombic, grow along the [100] direction together with an amorphous carbon thin film on In. The growth mechanism is examined and discussed in detail, and a model is proposed. AFM studies agree well with the proposed model, showing that the vertical thickness of the Mo2C crystals decreases inversely with the thickness of In for a given reaction time.

Nucleation and growth of graphene/Mo2C heterostructures on Cu through CVD

“…Under this driving force, the dissolved Mo atoms form a steady flux at the interface between the Mo-Cu alloy and Mo 2 C layer. Mo atoms travel to the Mo 2 C/MoCu interface and meet the incoming flux of carbon atoms to form Mo 2 C. This mechanism is examined and explained in detail in our previous study 14 . So as can be understood from here, in this process, the role of Cu (metal catalyst on Mo foil) is critical.…”

Ti3C2Tx MXene: A New Promising 2D Material for Optoelectronics

“…Unlike other MXene films, such as Mo 2 C made by chemical vapor deposition at high temperatures with a complex reaction procedure, 78 Ti 3 C 2 T x films are easier to make using solutionprocessed techniques. Thus, compared with other solutionprocessed conductors, the Ti 3 C 2 T x film offers less sheet resistance as well as high transmittance.…”

Growth Mechanism of 2D Mo2C on Cu via CVD

“…Although such materials may be suitable for applications such as energy storage and composite structures, they are not appropriate for electronic applications that require high purity and crystal perfection, especially in advanced electronic and microelectronic applications. Chemical vapor deposition (CVD) provides a promising solution for growing large area 2D crystals with fewer defects, without the presence of F or OH terminations in this context. − CVD-grown Mo 2 C crystals exhibit attractive properties, such as 2D superconductivity , and magnetoresistance. , …”

“…The importance of the metal layer thickness has been recognized but has not been quantified, and its role in the morphology of the crystal requires further study . Caylan and Buke proposed a model showing that the vertical growth of the Mo 2 C crystals decreases inversely with the thickness of the indium metal layer . This model has been substantiated using Atomic Force Microscopy (AFM) studies .…”

“…34 Caylan and Buke 28 proposed a model showing that the vertical growth of the Mo 2 C crystals decreases inversely with the thickness of the indium metal layer. 28 This model has been substantiated using Atomic Force Microscopy (AFM) studies. 15 While some progress has been made in gaining insight into the growth process of 2D Mo 2 C, the mechanism remains unclear and achieving reproducible control over thickness and morphology has been a challenging task.…”