Low-temperature synthesis/densification and properties of Si2N2O prepared with Li2O additive

Local electric field investigation of Si2N2O and its electronic structure, elastic and optical properties

“…(7)-(9), which may not be consistent with the measured value 6.17 by Tong et al [9]. However, it is found that in their experiment, some Li 2 O has been used for additive to prepare Si 2 N 2 O, and it is observed that the dielectric constant of Si 2 N 2 O is enhanced with the increase of residual Li content [9]. Therefore, when a comparison is made between the predicted value and the measured value from Tong et al, the effect of Li on the dielectric constant of Si 2 N 2 O should be considered.…”

“…Correspondingly, the calculated dielectric constant is 5.63 according to Eqs. (7)-(9), which may not be consistent with the measured value 6.17 by Tong et al [9]. However, it is found that in their experiment, some Li 2 O has been used for additive to prepare Si 2 N 2 O, and it is observed that the dielectric constant of Si 2 N 2 O is enhanced with the increase of residual Li content [9].…”

“…ı is the typical jumping distance, which has the same order as the lattice constants, m im is the molar mass, and p im is the concentration and the value is from the measurement [9]. Using Eqs.…”

“…Recently, a new synthesizing method to prepare Si 2 N 2 O with Li 2 O additive gives good dielectric properties ( = 6.17, tan ı = 0.0008) [9]. Thus, the good dielectric properties of Si 2 N 2 O mean that it can be used for many potential applications such as high temperature electric insulator, nuclear-reactor moderator or reflector, and materials for solid electrolytes.…”

Investigation of the effect of ZrO2 and ZrO2/Al2O3 additions on the hot-pressing and properties of equimolecular mixtures of α- and β-Si3N4

“…This means that asilicon nitride is completely transformed into b-silicon nitride. Formation of Si 2 N 2 O indicates two reaction possibilities [62][63][64][65][66][67][68][69][70][71][72]. First, capturing the oxygen from zirconia and reaction with silicon nitride.…”