Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

Muchuweni, Edigar; Sathiaraj, T.S.; Nyakotyo, H.

doi:10.1016/j.apsusc.2016.08.081

Cited by 24 publications

(12 citation statements)

References 45 publications

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“…Transparent conducting oxide (TCO) thin films have attracted significant research attention in the recent years due to their wide use in optoelectronic devices such as touch screens, liquid crystal displays, solar cells and light emitting diodes [1, 2, 3]. TCOs should exhibit both high electrical conductivity and high optical transparency in the visible region.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Muchuweni

Sathiaraj

Nyakotyo

2017

Heliyon

Self Cite

210

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Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain orientation. The mean crystallite size calculated on the basis of the Debye-Scherrer model was 24 nm and a small dislocation density of 1.7×10−3 nm−2 was obtained, indicating the existence of few lattice defects and good crystallinity. Scanning Electron Microscopy (SEM) micrographs revealed the film’s granular nature composed of rod-shaped and spherical nanoparticles which agglomerated to form micro-ring like film clusters on the film surface. The average transmittance in the visible region, optical band gap and Urbach energy were approximately 75–80%, 3.28 eV and 57 meV, respectively. The refractive index and extinction coefficient were determined using Swanepoel’s envelope method. Raman spectroscopy revealed the presence of small amounts of residual tensile stress and low density of defects in the ZnO thin films. This was consistent with XRD analysis. A low sheet resistivity (6.03×101 normalΩcm) and high figure of merit (4.35×10−6 Ω−1) were obtained for our films indicating their suitability in optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Muchuweni

Sathiaraj

Nyakotyo

2017

Heliyon

Self Cite

210

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“…Bulk ZnO is an n-type semiconductor material with a direct wide band gap energy (3.37 eV) and large exciton binding energy (60 meV) at room temperature. These properties make ZnO one of the most promising oxide semiconductors for high-performance optoelectronic devices, such as touch screens, liquid crystal displays, light-emitting diodes, chemical/biological sensors, dye-sensitized solar cells, and piezoelectric devices [ 1 , 2 , 3 ]. The optical properties of nanoscale devices can be controlled by tailoring the average size, shape, and surface modifications of nanometer-sized ZnO crystals [ 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

New Insights into the Role of Weak Electron–Phonon Coupling in Nanostructured ZnO Thin Films

Gandhi

Yeoh

et al. 2018

Nanomaterials

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High-quality crystalline nanostructured ZnO thin films were grown on sapphire substrates by reactive sputtering. As-grown and post-annealed films (in air) with various grain sizes (2 to 29 nm) were investigated by scanning electron microscopy, X-ray diffraction, and Raman scattering. The electron–phonon coupling (EPC) strength, deduced from the ratio of the second- to the first-order Raman scattering intensity, diminished by reducing the ZnO grain size, which mainly relates to the Fröhlich interactions. Our finding suggests that in the spatially quantum-confined system the low polar nature leads to weak EPC. The outcome of this study is important for the development of nanoscale high-performance optoelectronic devices.

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“…Meanwhile, the diameter increased greatly with solution concentration. Finally, well-aligned ZnO NWs were grown at the optimized growth temperature of 90 • and solution concentration of 25 mM for 2 h. The ZnO NWs fabricated by using GAZO thin films seed layers showed greater advantages than the undoped ZnO, GZO, and AZO thin films seed layers-based ZnO NWs [88], [89].…”

Section: B Hydrothermal Synthesis Methodsmentioning

confidence: 99%

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Xiu-sheng

Liu

et al. 2021

IEEE Access

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Ultraviolet photodetectors have attracted significant research attention in recent years due to their potential applications in civilian and military fields. ZnO nanowires and nanorods have been regarded as the most potential candidates for ultraviolet photodetectors fabrication because of their peculiar characteristics and size effect, which are different from their bulk material. Recently, many novel routes and semiconductor features, such as the surface and interface engineering, the pryo-phototronic effect, the piezo-phototronic effect, the surface plasmon effect and the surface functionalization have been utilized to improve the photoelectric characteristics of ultraviolet photodetectors. Thus, the working mechanism of these effects existing in ZnO nanowires/nanorods-based ultraviolet photodetectors should be investigated in-depth. In this paper, firstly, the hydrothermal method and the chemical vapor deposition method, as two typical synthesis methods of ZnO nanowires are briefly reviewed. Secondly, we focus on reviewing the properties of varied ZnO nanowires/nanorods-based ultraviolet photodetectors constructed using the above mentioned semiconductor features with metal-semiconductor-metal structure, Schottky barrier structure, vertical p-n heterojunction structure and core-shell heterostructure. Furthermore, the most attractive self-powered ultraviolet photodetectors are systematically reviewed. For various ZnO nanowires/nanorods-based ultraviolet photodetectors, we put the emphasis on the working mechanism of semiconductor features to improve the properties of the photodetectors. Finally, we give an outlook on the future development of ZnO nanowires/nanorods-based ultraviolet photodetectors.

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Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

Cited by 24 publications

References 45 publications

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

New Insights into the Role of Weak Electron–Phonon Coupling in Nanostructured ZnO Thin Films

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

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