Low-temperature synthesis of vertically aligned graphene through microwave-assisted chemical vapour deposition

Kulczyk-Malecka, Justyna; Santos, Isabella Vasconcelos Joviano dos; Betbeder, Marine; Rowley‐Neale, Samuel J.; Gao, Zhaohe; Kelly, Peter

doi:10.1016/j.tsf.2021.138801

Cited by 19 publications

(3 citation statements)

References 72 publications

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“…At low temperatures below 300 °C, the D + G peak of the graphene films was enhanced, means defective structures or graphene domain edges were increased in graphene films. Kulczyk-Malecka et al [55] prepared vertically graphene with gas mixture of CH 4 /H 2 /Ar on an adjustable silicon wafer without additional substrate heating at a constant pressure of 933 Pa in the range of 300 °C. The effect of parameters such as deposition time, gas ratio, microwave power, the distance of plasma and substrate were investigated.…”

Section: Low-temperature Synthesis Of Graphene By Mpcvdmentioning

confidence: 99%

Advances in Microwave‐Enhanced Chemical Vapor Deposition for Graphene Synthesis

et al. 2022

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Graphene has received intensive research interest in various areas due to its outstanding mechanical, electrical properties, high specific surface area and 2D flexible structure. Mechanical exfoliation generates defect-free graphene, but suffers from ultra-low yield. This drawback can be partially overcome by chemical vapor deposition method (CVD). However, conventional CVD imposes high temperature. In recent years, microwave plasma-enhanced CVD (MPCVD) has been widely investigated as a viable strategy toward large-area graphene synthesis. In this review, important issues during the process are summarized. Firstly, various MPCVD devices that have been explored for graphene synthesis are presented. Secondly, effect of carbon sources, nitrogen-containing gases, and CO 2 in the precursors are discussed. Thirdly, MPCVD enabled direct synthesis of graphene on metal substrates and non-metal sustrates is discussed. Finally, the advances of MPCVD in lowering the graphene synthesis temperature are demonstrated.

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Section: Low-temperature Synthesis Of Graphene By Mpcvdmentioning

confidence: 99%

Advances in Microwave‐Enhanced Chemical Vapor Deposition for Graphene Synthesis

et al. 2022

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“…[17][18][19][20] Adjusting ion energy and exposure time during synthesis can lead to higher defect concentrations. 21,22 However, meticulous experimental procedures are in place to carefully regulate these factors, preventing the introduction of excessive defects that could potentially undermine the performance of graphene-based devices.…”

Section: Introductionmentioning

confidence: 99%

Disclosure of the nano-scale hydrogen dynamics on mono-vacancy graphene: a reactivity study with incoming gases

Hassani

2024

Phys. Chem. Chem. Phys.

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“…Wu et al found that the growth speed of VG could reach 18.08 μm/min when power of plasma generator is very high, e.g., 18 kW, which is the fastest rate ever reported . Compared with thermal CVD growth of 2D graphene, the temperature required for the growth of VG with PECVD method is much lower. – In fact, VG can even be fabricated without the assistance of extra thermal decomposition of carbon precursors . Although the growth temperature may be very low, the power for generation of plasma must be very high in order to decompose carbon precursors efficiently and maintain the growth speed of VG.…”

Section: Introductionmentioning

confidence: 99%

Controllable Fabrication of Vertical Graphene with Tunable Growth Nature by Remote Plasma-Enhanced Chemical Vapor Deposition

Zhang,

Lv,

Fan

et al. 2023

ACS Omega

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As an important member of the graphene family, vertical graphene (VG) has broad applications like field emission, energy storage, and sensors owing to its fascinating physical and chemical properties. Among various fabrication methods for VG, plasma enhanced chemical vapor deposition (PECVD) is most employed because of the fast growth rate at relatively low temperature for the high-quality VG. However, to date, relations between growth manner of VG and growth parameters such as growth temperature, dosage of gaseous carbon source, and electric power to generate plasma are still less known, which in turn hinder the massive production of VG for further applications. In this study, the growth behavior of VG was studied as functions of temperature, plasma power, and gas composition (or chamber pressure). It was found that the growth behavior of VG is sensitive to the growth conditions mentioned above. Although conditions with high growth temperature, large flow rate of mixed gas of methane and carrier gases, and high plasma power may be helpful for the fast growth of VG, brunching of VG is simultaneously enhanced, which in turn decreases the vertical growth nature of VG. High-quality VG can be achieved by optimizing the growth parameters. It was revealed that the vertical growth nature of VG is governed by the electric field at the interfacial layer between VG and the substrate, for which its strength is influenced by the density of plasma. These findings are important for the general understanding of the VG growth and provided a feasible way for the controllable fabrication of VG using the remote PECVD method which is usually believed to be unsuitable for the fabrication of VG.

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Low-temperature synthesis of vertically aligned graphene through microwave-assisted chemical vapour deposition

Cited by 19 publications

References 72 publications

Advances in Microwave‐Enhanced Chemical Vapor Deposition for Graphene Synthesis

Advances in Microwave‐Enhanced Chemical Vapor Deposition for Graphene Synthesis

Disclosure of the nano-scale hydrogen dynamics on mono-vacancy graphene: a reactivity study with incoming gases

Controllable Fabrication of Vertical Graphene with Tunable Growth Nature by Remote Plasma-Enhanced Chemical Vapor Deposition

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