Low temperature synthesis of α-Al₂O₃ films by high-power plasma-assisted chemical vapour deposition

Abstract

Low temperature synthesis of -Al2O3 films by high-power plasma-assisted chemical vapour deposition.

A novel high-power pulse PECVD method

“…The deposition rate is found to increase linearly with increasing precursor flow in the 13 precursor flow range studied. It can also be noted that the deposition rate is slightly higher when using HiPP + DC power compared to using DC power.…”

“…There have been reports on the usage of the power scheme from HiPIMS in PECVD for depositing α-Al 2 O 3 [13], using a parallel plate PECVD reactor. This study reported an increased hardness of the films deposited when using high-power pulses compared to conventional PECVD, which was attributed to a better cracking of the AlCl 3 precursor by the higher plasma density, leading to lower chlorine incorporation in the films.…”

Influence of pulse power amplitude on plasma properties and film deposition in high power pulsed plasma enhanced chemical vapor deposition

“…In addition, during deposition of alumina films a lower deposition temperature for a-alumina was allowed by the use of HiPP-PECVD. 7 The lower deposition temperature was ascribed to the more efficient plasma and surface chemistry in the HiPP-PECVD reactor, leading to better cracking of the AlCl 3 precursors and thereby less chlorine incorporated in the films.…”

Effect of iron doping on the properties of nanopowders and coatings on the basis of Al2O3 produced by pulsed electron beam evaporation

“…It is known that there is a large number of works on the preparation of amorphous and amorphous nanoc rystalline (A NC) films [7,8], coatings [9,10], and submicron and NPs (NPs) [11,12] on the basis of Al 2 O 3 using different high temperature methods: pulsed laser evaporation [13,14], continuous and pulsed elec tron evaporation [15,16], different modifications of magnetron sputtering [9,10], plasma chemical technol ogies [17,18], detonation synthesis [19,20], etc.…”