Low temperature synthesis of α- and β-phase Bi2O3 thin film via B doping: tailoring optical band gap and n- to p-type Bi2O3

Dev, Bidhan Chandra; Babu, Md. Majibul Haque; Podder, Jiban; Sagadevan, Suresh; Zubair, Abdullah

doi:10.1007/s10854-019-01950-5

Cited by 8 publications

(9 citation statements)

References 35 publications

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“…The samples' measured FWHM ranged from 0.492° to 0.984°. Our results correspond well with those reported by (Dev et al 2019). The predicted crystallite size range for pure Bi2O3 and Bi2O3-doped ZnO thin lms produced on a glass substrate is 17.348 to 8.674 nm.…”

supporting

confidence: 94%

Synthesis, Optical and A.C Electrical Characteristics of Nanocomposites (Bi2O3/ZnO) Films Prepared by Thermal Evaporation Technique

Suhail

Abdulridha

2022

Preprint

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In this paper, pure bismuth oxide (Bi2O3) and ZnO-doped with a ratio of (0, 0.12, 0.24, 0.36 and 0.48 wt.%) thin films are prepared by thermal evaporation methods under pressure 1×10− 7 bar with a rate of deposition 0.5 nm.s− 1, at ambient temperature on glass substrates (RT) with thickness 50 nm and annealed at temperature 573 K for 2 hours. The phase structures of Bi2O3 (monoclinic) and Bi2O3/ZnO NCPs are confirmed by X-ray diffraction (XRD) investigation. The concentration of ZnO-doping reduces the average crystallite size from 17,35 nm to 8.67 nm. Moreover, using XRD data, the average strain, stress, and dislocation density values are computed. The spectroscopy techniques such as Fourier transform infrared (FT-IR) and scanning electron microscopy with field emission probes were used to examine the structures. The FT-IR results showed no chemical interactions between the (Bi2O3/ZnO) NPs. The results of the field emission-scanning electron microscope (FE-SEM) analysis the (Bi2O3/ZnO) NPs were distributed uniformly throughout. The actually result of optical characteristics for (Bi2O3/ZnO) showed that the absorbance, and absorption coefficient, increase with the increased concentrations of (ZnO). At the same time, the transmittance and energy band gaps were decreased with a rise in concentrations (ZnO) that have a high ability to absorb UV-light. The dielectric characteristics were checked in the frequency range from 100 Hz to 5 MHz. The results of the insulating characteristics showed that the dielectric constant and the dielectric loss of thin films (Bi2O3/ZnO) decreased with increasing frequency. In contrast, they increase when the concentration of (ZnO NPs) increases. The A.C conductivity of the thin films (Bi2O3/ZnO) increases with the frequency and concentration of (ZnO) NPs. Finally, the structural and insulating results the indicated characteristics of the (Bi2O3/ZnO) thin films may be helpful in various nano-electronic devices and sensors.

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confidence: 94%

Synthesis, Optical and A.C Electrical Characteristics of Nanocomposites (Bi2O3/ZnO) Films Prepared by Thermal Evaporation Technique

Suhail

Abdulridha

2022

Preprint

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“…In recent years, β-Bi 2 O 3 has gained a great deal of attention as a promising semiconductor material. It has high oxide ion conductivity, excellent electrochemical stability, remarkable photoconductivity, and good photoluminescence; moreover, it is low cost, easy to prepare, and environmentally friendly. − Particularly, β-Bi 2 O 3 , with an appropriate band gap range of about 2.2–2.6 eV reported by most experiments, − exhibits superior light absorption under visible light. ,, These favorable factors not only make that it has a wide range of applications in oxygen sensors, solar photovoltaic cells, , optoelectronic devices, and electrocatalytics but also promote it to become an ideal material for photocatalysis with promising applications in water decomposition, organic wastewater treatment, , and environmental remediation. , …”

Section: Introductionmentioning

confidence: 99%

“…4−6 Particularly, β-Bi 2 O 3 , with an appropriate band gap range of about 2.2−2.6 eV reported by most experiments, 7−12 exhibits superior light absorption under visible light. 7,10,13 These favorable factors not only make that it has a wide range of applications in oxygen sensors, 1 solar photovoltaic cells, 1,2 optoelectronic devices, 3 and electrocatalytics 14 but also promote it to become an ideal material for photocatalysis with promising applications in water decomposition, 15 organic wastewater treatment, 16,17 and environmental remediation. 18,19 β-Bi 2 O 3 is a tetragonal structure, its space group is SG P-42 1 c No.…”

Section: Introductionmentioning

confidence: 99%

Investigations on the p-Type Formation Mechanisms of Group II and VII Elements and N-Doped β-Bi₂O₃

Wang,

Zheng,

Kong

et al. 2023

J. Phys. Chem. C

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“…The α-Bi 2 O 3 phase is the favourite research candidate amongst the different polymorphic forms, due to its high refractive index, good photocatalytic activity and 2 of 29 stability at room temperature, while the α-Bi 2 O 3 nanostructure is well-known as a visible light active semiconductor. This makes it a very suitable candidate for solid-state white lightening optoelectronics, optical switches, ultra-short pulse generators and nonlinear optical fibre devices [1,[5][6][7]. The β-Bi 2 O 3 on the other hand, has shown tremendous potential in photo-electrochemical and photocatalytic applications [8].…”

Section: Introductionmentioning

confidence: 99%

“…Research literature indicates that the Bi 2 O 3 films have been prepared by various methods, such as the vapor transport method [7], spray pyrolysis technique, pulsed laser deposition (PLD), chemical vapor deposition (CVD), sputtering, electro-deposition and sol-gel technique [6]. Reported results indicate that it is possible to grow good quality oxide films at comparatively low substrate temperatures with PLD without the need for annealing treatment.…”

Section: Introductionmentioning

confidence: 99%

Influences of Substrate Temperatures and Oxygen Partial Pressures on the Crystal Structure, Morphology and Luminescence Properties of Pulsed Laser Deposited Bi2O3:Ho3+ Thin Films

et al. 2020

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Monoclinic Bi2O3:Ho3+ powder was synthesized using a co-precipitation method, followed by the deposition of Bi2O3:Ho3+ thin films on Si (100) substrates at various substrate temperatures (room temperature–600 °C) and oxygen partial pressures (5–200 mT) using pulsed-laser deposition. X-ray diffraction analysis showed a single α-Bi2O3 phase at temperatures of 400 and 500 °C, while a mixed α- and β-Bi2O3 phase was obtained at 600 °C. The films deposited at the different oxygen partial pressures showed an α-Bi2O3 and non-stoichiometric phase. The influences of different substrate temperatures and oxygen partial pressures on the morphology and the thickness of the films were analyzed using a scanning electron microscope. The root mean square roughnesses of the films were determined by using an atomic force microscope. The surface components, oxidation states and oxygen vacancies in all the deposited thin films were identified by X-ray photoelectron spectroscopy. The optical band gap of the Bi2O3:Ho3+ thin films was calculated using diffused reflectance spectra and was found to vary between 2.89 and 2.18 eV for the deposited films at the different temperatures, whereas the different oxygen partial pressures showed a band gap variation between 2.97 and 2.47 eV. Photoluminescence revealed that Ho3+ was the emitting centre in the isolated thin films with the 5F4/5S2 → 5I8 transition as the most intense emission in the green region.

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Low temperature synthesis of α- and β-phase Bi2O3 thin film via B doping: tailoring optical band gap and n- to p-type Bi2O3

Cited by 8 publications

References 35 publications

Synthesis, Optical and A.C Electrical Characteristics of Nanocomposites (Bi2O3/ZnO) Films Prepared by Thermal Evaporation Technique

Synthesis, Optical and A.C Electrical Characteristics of Nanocomposites (Bi2O3/ZnO) Films Prepared by Thermal Evaporation Technique

Investigations on the p-Type Formation Mechanisms of Group II and VII Elements and N-Doped β-Bi₂O₃

Influences of Substrate Temperatures and Oxygen Partial Pressures on the Crystal Structure, Morphology and Luminescence Properties of Pulsed Laser Deposited Bi2O3:Ho3+ Thin Films

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Low temperature synthesis of α- and β-phase Bi2O3 thin film via B doping: tailoring optical band gap and n- to p-type Bi2O3

Cited by 8 publications

References 35 publications

Synthesis, Optical and A.C Electrical Characteristics of Nanocomposites (Bi2O3/ZnO) Films Prepared by Thermal Evaporation Technique

Synthesis, Optical and A.C Electrical Characteristics of Nanocomposites (Bi2O3/ZnO) Films Prepared by Thermal Evaporation Technique

Investigations on the p-Type Formation Mechanisms of Group II and VII Elements and N-Doped β-Bi2O3

Influences of Substrate Temperatures and Oxygen Partial Pressures on the Crystal Structure, Morphology and Luminescence Properties of Pulsed Laser Deposited Bi2O3:Ho3+ Thin Films

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Investigations on the p-Type Formation Mechanisms of Group II and VII Elements and N-Doped β-Bi₂O₃