Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers

Erofeev, E. V.; Fedin, I.; Fedina, V. V.; Fazleev, A. P.

doi:10.1134/s1063782619020064

Cited by 1 publication

(2 citation statements)

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“… – 5 In addition, when varying the Al content, the bandgap of AlGaN varies from 3.4 eV for GaN to 6.2 eV for AlN, covering a broad spectral range 5 – 8 This makes AlGaN and their based heterostructures very promising for the realization of a number of electronic and optoelectronic devices, such as high electron mobility transistors (HEMT), 9 – 11 metal–oxide semiconductor (MOS) HEMT, 12 MOS heterostructures field-effect transistor, 13 , 14 ultra-violate (UV) light-emitting diodes (LEDs), 15 – 18 and solar-blind UV photodetectors 19 – 21 …”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5] In addition, when varying the Al content, the bandgap of AlGaN varies from 3.4 eV for GaN to 6.2 eV for AlN, covering a broad spectral range. [5][6][7][8] This makes AlGaN and their based heterostructures very promising for the realization of a number of electronic and optoelectronic devices, such as high electron mobility transistors (HEMT), [9][10][11] metal-oxide semiconductor (MOS) HEMT, 12 MOS heterostructures field-effect transistor, 13,14 ultra-violate (UV) light-emitting diodes (LEDs), [15][16][17][18] and solar-blind UV photodetectors. [19][20][21] Yet, the performance of AlGaN-based devices has been limited by some challenging issues connected to the AlGaN layer quality, 4,8,22 e.g., the relatively low internal quantum efficiency, the poor p-type doping efficiency, and hardly achievable n-and p-type good ohmic contacts.…”

Section: Introductionmentioning

confidence: 99%

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Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

et al. 2022

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The size and density of nanopits, generated at the surface of their top layer, strongly affect the electrical and optical properties of AlGaN-based structures. Therefore, the control of the layer quality evolution as a function of the nanopits size/density is a crucial issue to enhance the device performance. In this paper, the effects of the nanopits diameter observed at the surface of AlGaN on carrier dynamics are systematically investigated. The variation of nanopits diameter is achieved through thermal annealing of a set of AlGaN/GaN heterostructures at different temperatures. The samples are characterized using the scanning electron microscope (SEM), energy-dispersive x-ray, high-resolution x-ray diffraction, photoluminescence (PL), and timeresolved PL spectroscopies. SEM images have revealed an increase in the nanopits diameter with increasing annealing temperature. In addition, we observed a linear development in the yellow luminescence intensity, accompanied by a deterioration in the PL decay times due to an increase in the density of point-defect complexes that act as nonradiative recombination centers. We also performed temperature-dependent PL measurements to study the impact of the nanopits diameter on electron-phonon scattering processes. Both electron-acoustic-and electron-longitudinal optical phonon interactions enhance with increasing nanopits diameter.

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