Low-Temperature Thermal Conductivity of Boron

Thompson, James C.; McDonald, W.J.

doi:10.1103/physrev.132.82

Cited by 14 publications

(6 citation statements)

References 10 publications

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“…The Debye temperature of β-Ir 4 B 5 (444(4) K) is higher than the temperature of α-Ir 4 B 5 (392(4) K), whereas both are in the same temperature range as elemental iridium (420 K) and noticeably smaller than the Debye temperature of elemental boron (1219 K). The herein determined values for the Debye temperature of elemental iridium (343(3) K) and boron (928(9) K) are smaller than the values tabulated in the literature. , These deviations can arise from different fitting ranges and fitting difficulties. The T 3 -plots are shown in Figures S7–S10.…”

Section: Resultssupporting

confidence: 86%

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High-Pressure Synthesis of β-Ir₄B₅and Determination of the Compressibility of Various Iridium Borides

et al. 2018

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A new iridium boride, β-Ir4B5, was synthesized under high-pressure/high-temperature conditions of 10.5 GPa and 1500 °C in a multianvil press with a Walker-type module. The new modification β-Ir4B5 crystallizes in a new structure type in the orthorhombic space group Pnma (no. 62) with the lattice parameters a = 10.772(2) Å, b = 2.844(1) Å, and c = 6.052(2) Å with R1 = 0.0286, wR2 = 0.0642 (all data), and Z = 2. The structure was determined by single-crystal X-ray and neutron powder diffraction on samples enriched in 11B. The compound is built up by an alternating stacking of boron and iridium layers with the sequence ABA′B′. Additionally, microcalorimetry, hardness, and compressibility measurements of the binary iridium borides α-Ir4B5, β-Ir4B5, Ir5B4, hexagonal Ir4B3–x and orthorhombic Ir4B3–x were carried out and theoretical investigations based on density function theory (DFT) were employed to complement a comprehensive evaluation of structure–property relations. The incorporation of boron into the structures does not enhance the compressibility but leads to a significant reduction of the bulk moduli and elastic constants in comparison to elemental iridium.

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Section: Resultssupporting

confidence: 86%

“…The herein determined values for the Debye temperature of elemental iridium (343(3) K) and boron (928(9) K) are smaller than the values tabulated in the literature. 75,76 These deviations can arise from different fitting ranges and fitting difficulties. The T 3 -plots are shown in Figures S7–S10.…”

Section: Resultsmentioning

confidence: 99%

High-Pressure Synthesis of β-Ir₄B₅and Determination of the Compressibility of Various Iridium Borides

et al. 2018

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“…Iridium, as the heaviest element, is expected to have the lowest ω 2 i , Debye frequency of metallic iridium is about Θ Ir ≃ 36 meV (420 K) [21]. In contrast, the lightest boron is certainly expected to have the highest phonon frequencies, and for crystalline boron Θ B ≃ 100 meV (1200 K) [22]. Finally, magnesium average frequencies are expected to locate between the values of iridium and boron.…”

Section: Resultsmentioning

confidence: 98%

Electronic structure of the noncentrosymmetric superconductor Mg10Ir19B16

Wiendlocha,

Tobola,

Kaprzyk

2007

Preprint

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Electronic structure of a novel superconducting noncentrosymmetric compound Mg 10 Ir 19 B 16 was calculated using the Korringa-Kohn-Rostoker method. Electronic part of the electron-phonon coupling constant, McMillan-Hopfield parameters, were calculated using the rigid-muffin-tin approximation (RMTA). The magnitude of the electron-phonon coupling constant λ, analysing atomic contributions, is discussed. Our results show, that superconductivity in Mg 10 Ir 19 B 16 is presumably mediated by electron-phonon interaction.

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“…The thermal conductivity of silicon is 142.2 Wm −1 K −1 (300 K) [10]. The thermal conductivity of boron is 30 Wm −1 K −1 [11]. In the case of boron, the dependence of conductivity on temperature is exponential [11].…”

Section: Resultsmentioning

confidence: 99%

Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

Rani

Ramachandran

2011

MSF

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Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.

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Low-Temperature Thermal Conductivity of Boron

Cited by 14 publications

References 10 publications

High-Pressure Synthesis of β-Ir₄B₅and Determination of the Compressibility of Various Iridium Borides

High-Pressure Synthesis of β-Ir₄B₅and Determination of the Compressibility of Various Iridium Borides

Electronic structure of the noncentrosymmetric superconductor Mg10Ir19B16

Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

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Low-Temperature Thermal Conductivity of Boron

Cited by 14 publications

References 10 publications

High-Pressure Synthesis of β-Ir4B5and Determination of the Compressibility of Various Iridium Borides

High-Pressure Synthesis of β-Ir4B5and Determination of the Compressibility of Various Iridium Borides

Electronic structure of the noncentrosymmetric superconductor Mg10Ir19B16

Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

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High-Pressure Synthesis of β-Ir₄B₅and Determination of the Compressibility of Various Iridium Borides

High-Pressure Synthesis of β-Ir₄B₅and Determination of the Compressibility of Various Iridium Borides