“…48 For comparison with other similar bismuth antimony alloy systems, a maximum value of zT z 0.23 was attained for Sn-doped (Bi 85 Sb 15 ) 1Àx Sn x with x ¼ 0.00 fabricated using pressureless sintering techniques; 49 a maximum value of zT z 0.26 was attained at 260 K for (Bi 85 -Sb 15 ) 1Àx Pb x with x ¼ 0.00 fabricated using mechanical alloying in combination with pressureless sintering. 50 For Bi 85 Sb 13 Nb 2 fabricated using high-press sintering, a maximum of zT ¼ 0.36 was attained at 200 K. 40 It should be noted that zT > 1 could be attained for Bi-Sb-Te alloys around room temperature. 51,52 The downturn temperature dependence of the electrical conductivity around room temperature is attributed to semiconductor-semimetal transition, which is observed for all the alloys except the x ¼ 0.15 alloy sintered at 170 C. For the effects of Zn doping, the power factors are enhanced for all Bi 0.88Àx -Zn x Sb 0.12 alloys, except that for the x ¼ 0.15 alloy.…”