Low-temperature transport properties in AlxGa1−xAsySb1−y/InAs quantum wells: Well-width dependence

Hall effect and magnetoresistance analysis by electron–hole coexisting model in AlInSb/InAsSb quantum wells

“…6(b)). The AlGaAsSb/InAs QW is known to have a type-II band structure [8], and electrons and holes coexists in this system [2]. The present InAsSb QW shows similar transport properties with the InAs QW, which supports this possibility.…”

“…In our previous InAs QWs, we found that two types of carriers, electrons and a small amount of holes, were coexisting and it is considered to come from a type-II band structure [2]. On the other hand, the resistivity of InSb QWs drastically increases with decreasing temperature and it shows hopping transport at low temperature.…”

“…In our previous works, AlGaAsSb/InAs and AlInSb/InSb quantum wells (QWs) have been investigated for the development of a highly-sensitive Hall sensor [1][2][3][4]. These barrier layers were chosen to reduce the lattice mismatch with the active layers.…”