Low-temperature vapor reduction of graphene oxide electrodes for vertical organic field-effect transistors

Abstract

Vertical organic field-effect transistors based on a low-temperature-prepared reduced graphene oxide electrode.

A design strategy for high-performance vertical organic field-effect transistors based on reduced graphene oxide electrodes

“…Interestingly, there is no saturation current observed in the output characteristics, which is consistent with our previous findings in rGO-VOFETs and other graphene-VOFETs. 12,13,[23][24][25] In a subsequent study, we calculated the carrier mobility of organic semiconductors using the space-charge-limited current technique and found that the carrier mobility of the organic semiconductor is not the main limiting factor in this type of device. The highest potential current density is much larger than the value obtained for the device.…”

“…The thickness of the GO film is ∼1 nm, indicating its monolayer structure. 24 Importantly, the high-coverage smooth surface was maintained after the reduction treatment (Fig. S1c, ESI†), which is essential to ensure its high conductivity.…”

“…For the application of rGO electrodes in VOFETs, an ultrathin film structure is needed to enable its gate-tunable characteristics. [22][23][24][25] Nevertheless, it is always challenging to prepare such an ultrathin rGO electrode. In a prior study, we proposed a simple spin-coating and reduction method to effectively prepare a uniform ultrathin rGO film, based on which the first p-type rGO-VOFETs were reported, achieving a current density of 30.65 mA cm À2 .…”