Low temperature ZEP-520A development process for enhanced critical dimension realization in reactive ion etch etched polysilicon

Wang, H.; Laws, G. M.; Miličić, S. N.; Boland, P.; Handugan, A.; Pratt, M.; Eschrich, T.; Myhajlenko, S.; Allgair, John A.; Bunday, Benjamin

doi:10.1116/1.2426976

Cited by 17 publications

(9 citation statements)

References 7 publications

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“…One source of sidewall roughness is the line edge roughness in the lithography. Previous works have observed that the temperature of the development step for E-beam resists strongly affects the line edge roughness of E-beam patterns, as observed under SEM [70], [71].…”

Section: A Developmentmentioning

confidence: 87%

Si<inline-formula><tex-math>$_{\bf 3}$</tex-math></inline-formula>N<inline-formula> <tex-math>$_{\bf 4}$</tex-math></inline-formula> Nanobeam Optomechanical Crystals

Grutter

Davanço

Srinivasan

2015

IEEE J. Select. Topics Quantum Electron.

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The development of Si 3 N 4 nanobeam optomechanical crystals is reviewed. These structures consist of a 350-nm thick, 700-nm wide doubly-clamped Si 3 N 4 nanobeam that is periodically patterned with an array of air holes to which a defect region is introduced. The periodic patterning simultaneously creates a photonic bandgap for 980 nm band photons and a phononic bandgap for 4 GHz phonons, with the defect region serving to colocalize optical and mechanical modes within their respective bandgaps. These optical and mechanical modes interact dispersively with a coupling rate g 0 /2π ≈ 100 kHz, which describes the shift in cavity mode optical frequency due to the zero-point motion of the mechanical mode. Optical sidebands generated by interaction with the mechanical mode lie outside of the optical cavity linewidth, enabling possible use of this system in applications requiring sideband-resolved operation. Along with a review of the basic device design, fabrication, and measurement procedures, we present new results on improved optical quality factors (up to 4 × 10 5 ) through optimized lithography, measurements of devices after HF acid surface treatment, and temperature dependent measurements of mechanical damping between 6 and 300 K. A frequency-mechanical quality factor product (f × Q m ) as high as ≈ 2.6 × 10 13 Hz is measured.

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Section: A Developmentmentioning

confidence: 87%

Si<inline-formula><tex-math>$_{\bf 3}$</tex-math></inline-formula>N<inline-formula> <tex-math>$_{\bf 4}$</tex-math></inline-formula> Nanobeam Optomechanical Crystals

Grutter

Davanço

Srinivasan

2015

IEEE J. Select. Topics Quantum Electron.

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“…This is in agreement with previous studies on cold development of Poly͑methyl methacrylate͒ ͑PMMA͒ 15-17 and ZEP 520. 15,18 …”

Section: Introductionmentioning

confidence: 98%

Cold-developed electron-beam-patterned ZEP 7000 for fabrication of 13 nm nickel zone plates

Reinspach

Lindblom

Hofsten

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Cold development was applied to improve the resolution in a trilayer resist that is used for the fabrication of state-of-the-art soft x-ray microscopy zone plates. By decreasing the temperature of the hexyl acetate developer to −50 °C, 11 nm half-pitch gratings have been resolved in the electron-beam resist ZEP 7000. 12 nm half-pitch gratings have been successfully transferred, via the intermediate SiO2 hardmask, into the bottom polyimide layer by CHF3 and O2 reactive ion etching. The trilayer resist, including optimized cold development, has finally been used in an electroplating-based process for the fabrication of nickel zone plates. Zone plates with down to 13 nm outermost zone width have been fabricated and 2.4% average groove diffraction efficiency has been measured for zone plates with 15 nm outermost zone width and a nickel height of 55 nm.

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“…EBL can pattern arbitrary features with a resolution of approximately 10 nm. [2,3] Silicon stamps were then treated with fluorinated silane prior to the metal deposition. The presence of a fluorinated silane interface between the relief pillar and the metallic film weakens the adhesion between the latter two and facilitates the transfer of metallic disks.…”

Section: Results and Discussion Ntp Process Descriptionmentioning

confidence: 99%

Stamping plasmonic nanoarrays on SERS‐supporting platforms

Bhandari

Wells

Polemi

et al. 2011

J Raman Spectroscopy

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The dielectric property of a nanoparticle-supporting film has recently garnered attention in the fabrication of plasmonic surfaces. A few studies have shown that the localized surface plasmon resonance (LSPR), and hence surface-enhanced Raman scattering (SERS), strongly depends on the substrate refractive index. In order to create higher efficiency SERS-active surfaces, it is therefore necessary to consider the substrate property along with nanoparticle morphology. However, due to certain limitations of conventional lithography, it is often not feasible to create well-defined plasmonic nanoarrays on a substrate of interest. Here, an additive nanofabrication technique, i.e., nanotransfer printing (nTP), is implemented to integrate electron beam lithography (EBL) defined high-aspect-ratio nanofeatures on a variety of SERS-supporting surfaces. With the aid of suitable surface chemistries, a wide range of plasmonic particles were successfully integrated on surfaces of three physically and chemically distinct dielectric materials, namely, polydimethyl siloxane (PDMS), SU-8 photoresist, and glass surfaces, using silicon-based relief pillars. These nTP-created metal nanoparticles strongly amplify the Raman signal and complement the selection of suitable substrates for better SERS enhancement. Our experimental observations are also supported by theoretical calculations. The implementation of nTP to stamp out metal nanoparticles on a multitude conventional/unconventional substrates has novel applications in designing in-built plasmonic microanalytical devices for SERS sensing and other related photonic studies. Copyright (C) 2011 John Wiley & Sons, Ltd

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Low temperature ZEP-520A development process for enhanced critical dimension realization in reactive ion etch etched polysilicon

Cited by 17 publications

References 7 publications

Si<inline-formula><tex-math>$_{\bf 3}$</tex-math></inline-formula>N<inline-formula> <tex-math>$_{\bf 4}$</tex-math></inline-formula> Nanobeam Optomechanical Crystals

Si<inline-formula><tex-math>$_{\bf 3}$</tex-math></inline-formula>N<inline-formula> <tex-math>$_{\bf 4}$</tex-math></inline-formula> Nanobeam Optomechanical Crystals

Cold-developed electron-beam-patterned ZEP 7000 for fabrication of 13 nm nickel zone plates

Stamping plasmonic nanoarrays on SERS‐supporting platforms

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